Effect of ultrasonic treatment on the generation characteristics of irradiated silicon-silicon-dioxide interface

Parchinskii, P. B.; Vlasov, S. I.; Ligai, L. G.

doi:10.1134/s106378260607013x

Cited by 10 publications

(4 citation statements)

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“…Recent time much attention is paid to the study of ultrasound influence on the defect structure and electrophysical properties of semiconductor structures [1][2][3][4][5][6][7][8]. In particular, it is revealed, that the broadering of a solar cell (SC) spectral sensitivity range [2], low-temperature annealing of radiating defects [3][4][5] and passivation of grain boundary defects [6] can be realized by the intensification of the defects diffusion and restructuring in a ultrasound field.…”

Section: Introductionmentioning

confidence: 99%

“…In particular, it is revealed, that the broadering of a solar cell (SC) spectral sensitivity range [2], low-temperature annealing of radiating defects [3][4][5] and passivation of grain boundary defects [6] can be realized by the intensification of the defects diffusion and restructuring in a ultrasound field. At the same time processes which occur in material under the acousto-induced nonequilibrium conditions are not clear till now and attract enhanced interest of researchers [7,8].…”

Section: Introductionmentioning

confidence: 99%

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The Dynamic Ultrasound Influence on the Diffusion and Drift of the Charge Carriers in Silicon p-n Structures

2007

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Study of the current-voltage (I-V) characteristics of silicon solar cells, treated by MHz ultrasound with intensity up to 3 W/cm 2 have been carried out. It is revealed that under such nonequilibrium conditions, the minority carriers' diffusion process changes, which leads to the increase of the photocurrent (up to 15 %). An acoustostimulated reduction (down to 40 %) of the saturation current of the p-n junction is also observed. It is determined, that the observed changes depend nonlinearly on ultrasound power density, and the efficiency of the ultrasound influence increases with the vibration frequency. We consider that the ultrasound induced effects are connected with nonequilibrium processes of ionization and reorientation of structural defects in the acoustic field.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

The Dynamic Ultrasound Influence on the Diffusion and Drift of the Charge Carriers in Silicon p-n Structures

2007

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“…It is well known that N ss is sensitive to different forms of stress, including ionizing irradiation [2]. Recent studies have revealed that ultrasonic treatment can also induce structural changes in the defects at the Si/ SiO 2 interface [3,4]. In particular, ultrasound has been found to decrease the radiation-induced surface-charge density [4].…”

Section: Introductionmentioning

confidence: 99%

Density of states at a gamma-irradiated Si/SiO2 interface: The effect of ultrasonic treatment

Parchinskii

2005

Russ Microelectron

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An experimental study is conducted into the effect of ultrasonic treatment on the surface-state distribution function of a gamma-irradiated Si/SiO 2 interface. It is established that ultrasonic treatment reduces the density of radiation-induced states at the interface. It is shown that this effect may be linked to the ultrasoundinduced transition of defects to an electrically inactive state. SOLID-STATE DEVICES AND CIRCUITS-32 -28 -24 -20 -16 -12 -8 -4 4 8 0.95 0.90 0.85 C / C 0 1 2 3 4 V , V Fig. 1.High-frequency C-V characteristics. Curves 1 -3 are obtained by measurement before irradiation, between irradiation and ultrasonic treatment, and after ultrasonic treatment, respectively. Curve 4 is a calculated one.

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“…Recently, Parchinski oe et al [10,11] studied the effect of ultrasonic treatment on the properties of MDS structures based on n-type silicon. In the present paper, we demonstrate the influence of ultrasound on the electrical characteristics of MDS structures based on silicon single crystals of the p-type.…”

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confidence: 99%

10.1007/s11455-008-3019-x

2010

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The effect of ultrasonic treatment at various powers on the density N SS of surface states and their energy spectrum in p -type silicon single crystals has been studied. It is established that, depending on the regime of ultrasonic treatment, N SS can either increase or decrease compared to that in the initial single crystals. This is accompanied by a redistribution of the total charge of the surface states over the silicon bandgap width. This phenomenon is related to the fact that an acoustic wave, being an energy carrier, modifies a defect subsystem of the crystal by redistributing the impurity atoms and by generating new defects.

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Effect of ultrasonic treatment on the generation characteristics of irradiated silicon-silicon-dioxide interface

Cited by 10 publications

References 1 publication

The Dynamic Ultrasound Influence on the Diffusion and Drift of the Charge Carriers in Silicon p-n Structures

The Dynamic Ultrasound Influence on the Diffusion and Drift of the Charge Carriers in Silicon p-n Structures

Density of states at a gamma-irradiated Si/SiO2 interface: The effect of ultrasonic treatment

10.1007/s11455-008-3019-x

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