We report on a 40 Gbit/s silicon-organic hybrid (SOH) modulator with 11 dB extinction ratio.A novel electro-optic chromophore with record in-device nonlinearity of 180 pm/V leads to V  L = 0.5 Vmm and a low energy consumption of 1.6 fJ/bit at 12.5 Gbit/s. IntroductionEnergy-efficient silicon electro-optic modulators are key components for future short-distance interconnects in data centers and highperformance computers [1]. Targeted energy consumptions are tens of fJ/bit for dense offchip connections, and a few fJ/bit for global onchip connections [1]. Over the last years, a variety of silicon modulators has been demonstrated based on free-carrier depletion, or injection in pn-diodes, or based on metal-oxidesemiconductor (MOS) structures [2,3]. Carrier injection devices have typically very small voltage-length products of π V L = 0.36 V mm [4], but the large carrier lifetime calls for pre-emphasis and limits the modulation speed to 20 GHz. The modulation energy per bit is usually in the pJrange due to the forward bias of the diode. Carrier depletion modulators, in contrast, have been demonstrated to operate at data rates of up to 50 Gbit/s [5], but typically with

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Abstract:We propose a bidirectional, polarization-independent, recirculating IQ-modulator scheme based on the silicon-organic hybrid (SOH) platform. We demonstrate the viability of the concept by using an

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