Optical pulse durations of an InAs two-section passively mode-locked quantum dot laser with a proton bombarded absorber section reduce from 8.4 ps at 250K to 290 fs at 20 K, a factor of 29, with a corresponding increase in optical bandwidth. Rate equation analysis of gain and emission spectra using rate equations suggests this is due to the very low emission rate of carriers to the wetting layer in the low temperature, random population regime which enables dots across the whole inhomogeneous distribution to act as independent oscillators. (C) 2013 AIP Publishing LLC
We examine in detail the relation between the optical gain spectra, mode-locked optical emission spectra, and temporal optical pulse widths as a function of temperature between 80 and 300 K in passively mode-locked InAs quantum dot lasers. By increasing the length of the active region, we can decrease the threshold gain requirement for mode locking. At 300 K, where the dot states and wetting layer are close to thermal equilibrium, the bandwidth of the optical emission spectra and temporal optical pulse width remain largely unaffected when the threshold gain requirement is reduced. At 80 K, where the dots are randomly populated, there is a near doubling of the optical bandwidth for the same reduction of the threshold gain requirement and a corresponding decrease in the temporal optical pulse width. Rate equations, which take explicit account of the photon density in the cavity, are used to qualitatively highlight the key parameters, which are responsible for increasing the optical bandwidth in the random population regime.
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