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A great deal of interest has grown in both academia and industry toward flexible multiferroics in the recent years. The coupling of ferromagnetic properties with ferroelectric properties in multiferroic materials opens up many opportunities in applications such as magnetoelectric random access memories, magnetic field sensors, and energy harvesters. Multiferroic materials on a flexible platform bring an exciting opportunity for the next generation of consumer electronics owing to their unique characteristics of wearability, portability, and weight reduction. However, the fabrication of flexible multiferroic devices is still a great challenge due to various technical difficulties, including the requirement of high growth temperature of the oxide-based multiferroic materials, their lattice mismatch with the flexible substrates, and the brittleness of the functional layers. In this review article, we will discuss different methods of fabricating flexible or even freestanding oxide films to achieve flexible electronics. This article will address the benefits and challenges of each synthesis method in terms of interlayer interactions and growth parameters. Furthermore, the article will include an account of the possible bending limits of different flexible substrates without degrading the properties of the functional layer. Finally, we will address the challenges, opportunities, and future research directions in flexible multiferroics.

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We report the optical characteristics of relatively large sized (∼7.0-8.0 μm) but low aspect ratio Ge microdisks grown on a virtual Si 0.5 Ge 0.5 substrate using molecular beam epitaxy following the Stranski-Krastanov growth mechanism. Grown microdisks with very low aspect ratio Ge islands exhibit direct band gap (∼0.8 eV) photoluminescence emission sustainable up to room temperature, enabled by the confinement of carriers into the microdisks. p-i-n diodes with an intrinsic layer containing Ge microdisks have been fabricated to study their emission and photoresponse characteristics at an optical communication wavelength of ∼1550 nm. A strong electroluminescence at 1550 nm has been achieved at low temperatures in the device for a very low threshold current density of 2.56 μA cm −2 due to the strong confinement of injected holes. The emission characteristics of the fabricated device with respect to the injected current density and temperature have been studied. Novel emission and optical modulation characteristics at 1550 nm of the fabricated p-i-n device containing Ge microdisks grown on a virtual SiGe substrate indicate its potential for Si CMOS compatible on-chip optical communications.