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A completely integrated single-chip phase locked loop based on a 0.2p.m gate length enhancement / depletion AlGaAs / CaAs / AIGaAs-HEMT technology has been designed and characterized. The chip contains a VCO with 34 CHz center frequency, a dynamic frequency divider by two, a static divider by eight, a phase detector, and a loop filter. The chip size is 2.0 x 1.5 mmz. The power consumption is 7.2 W at a supply voltage of -5.0 V. The locking range is approximately f 700 MHz.

During the past five years numerous mixed signal integrated circuits (IC's) have been designed, processed, and characterized based on our 0.2 mu m gate length AlGaAs/GaAs quantum well HEMT technology. Utilizing the inherent advantages of the AlGaAs/GaAs material system, optical, analog, microwave, and digital functions have been integrated monolithically. Examples are a chip set for 40 Gb/s optoelectronic data transmission systems, 15 and 34 GHz PLL's, a 35 GHz phase shifter for phased array antenna applications, a 2-kb ROM with subnanosecond access time for direct digital signal synthesis, and a 6-k gate array

A completely integrated single-chip phase-locked loop was designed using a 0.2 pmenhancement I depletion A1GaAslGaAslA1GaAs-HEMT technology. The chip contains a VCO with 15 GHz center frequency, as well as a frequency divider, a phase detector, and ai loop filter. The fabricated chip size is 1.5 x 1.5 mm'. The power consumption is 0.5 W using a supply voltage of 5.0 V. The lock range is approximately k 270 MHz. The phase noise is -100 dBc/Hz at 100 kHz and -107 dBdHz at lMHz offset from the carrier, respectively.

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