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This paper presents the design of frequencyselective limiting circuits based on nonlinear matched reflectionmode bandstop resonators. This type of Frequency Selective Limiters achieve fast switching, high-level of power limiting, and flexible channel bandwidth. Initial measured results of a firstorder device indicate 0 dBm limiting threshold, 32 dB limiting level, 2 dB insertion loss, and 200 MHz limiting bandwidth. A third degree device is also presented. Simulated results show an excellent highly selective bandstop performance at high powers with a near all-pass response at low signal powers. This is the first time such a multi-pole matched Frequency Selective Limiter has been reported.

The use of bandstop resonators incorporating non-linear components is presented. The non-linear resonator provides frequency selective power limiting. Measured results are presented for a microstrip device incorporating a GaAs Schottky diode. The prototype device demonstrates a narrowband bandstop response with a limiting threshold of 0dBm. It achieves high level of power limiting over 30dB with below 2dB insertion loss.

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