Fast and accurate decapsulation of Integrated Circuits packages is a key step of successful further observations and defect localization in microelectronics analysis laboratories. In addition to classical techniques, laser technology was introduced to enhance considerably performance in creating precise and local exposure of selective sub layers in complex System in Package (SiP). In this paper, we will demonstrate all the benefits of this technique. The results of this new process were characterized according to laser parameters.

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The origin of a leakage current in several failed NPN bipolar transistors has been identified by complementary advanced failure analysis techniques. After precise localization of the failing area by photon emission microscopy and optical beam induced resistance change investigations, a focus ion beam technique was used to prepare thin lamellae adequate for transmission electron microscopy (TEM) study. Characterization of the related microstructure was performed by TEM and energy-dispersive spectrometry nanobeam analyses. It was identified as Ti-W containing trickle-like residue located at the surface of the spacers. Current-voltage measurements could be related to such structure defects and the involved conduction mechanism was identified as the Poole-Frenkel effect.

Decapsulation of complex semiconductor packages for failure analysis is enhanced by laser ablation. If lasers are potentially dangerous for Integrated Circuits (IC) surface they also generate a thermal elevation of the package during the ablation process. During measurement of this temperature it was observed another and unexpected electrical phenomenon in the IC induced by laser. It is demonstrated that this new phenomenon is not thermally induced and occurs under certain ablation conditions.

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