Growth technology of new narrow‐gap semiconductor solid solution ZnCdHgTe proposed as an alternative material to CdHgTe due to the stabilizing effect of Zn‐Hg bond in the lattice of the compound is presented. Results of electrical examinations performed at the first time for the heterostructures based on ZnCdHgTe are also reported.

Current -voltage (IVC) and capacitance -voltage (CVC) of heterostructures (Cd, Zn)Te/ZnCdHgTe are studied for the first time. Thin films Zn x Cd y Hg 1-x-y Te were grown on monocrystalline (111) CdTe and ZnTe substrates by PLE technology. Deposition was carried out on substrates held at temperatures near 290 K. The thickness of investigated films was estimated to be about 5 µm. Electric characteristics of the as-grown structures were examined under T = 77 -290 K in the wide range of applied bias. All investigated samples have demonstrated diode-like IVC and CVC under test signal frequency f = 1 kHz. Heterostructures CdTe/ZnCdHgTe have exhibited a room temperature photosensitivity in spectral range 0.50 -0.65 µm..

Growth technology and electric properties of the new semiconductor compound ZnCdHgTe obtained by modified liquid phase epitaxy technique on (111) CdTe single crystal substrates are described. Principal attention is focused on current‐voltage characteristics of the heterostructures ZnxCdyHg1‐x‐yTe/CdTe. The mechanism of carriers transfer, in particular, multi‐mode regime governed by the charge states localized at the interface, is studied. Results of numerical experiment performed for the first time for examined heterostructures are in good qualitative and quantitative agreement with the data of electric measurements.

A study is made of the effect of CdTe substrate orientation and of conditions of precipitation on the structure of CdxHg1−xTe layers prepared by liquid epitaxy from mercury solutions. Under certain conditions one can obtain CdTe–CdxHg1−xTe heterostructures with a transition region of about 0.5 μm.

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