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Articles you may be interested inMicrostructure and optical absorption properties of Si nanocrystals fabricated with lowpressure chemicalvapor deposition Stresses and strains in latticemismatched stripes, quantum wires, quantum dots, and substrates in Si technology

In this paper we report absorption measurements in the range 0.6 -6.0 eV, performed at 77 K on Ge nanocrystals grown by a self-organization process applied to a semiconductor. Evidence of a relevant blueshift of E 2 and weakening of E 1 with size reduction is obtained. This behavior is interpreted in terms of quantum confinement in connection with the different nature of the two structures.

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