Integrated optical antennas are key components for on-chip light detection and ranging technology (LIDAR). In order to achieve a highly collimated far field with reduced beam divergence, antenna lengths on the order of several millimeters are required. In the high-index contrast silicon photonics platform, achieving such long antennas typically demands weakly modulated gratings with lithographic minimum feature sizes below 10 nm. Here, we experimentally demonstrate a new, to the best of our knowledge, strategy to make long antennas in silicon waveguides using a metamaterial subwavelength grating (SWG) waveguide core loaded with a lateral periodic array of radiative elements. The mode field confinement is controlled by the SWG duty cycle, and the delocalized propagating mode overlaps with the periodic perturbations. With this arrangement, weak antenna radiation strength can be achieved while maintaining a minimum feature size as large as 80 nm. Using this strategy, we experimentally demonstrate a 2-millimeter-long, single-etched subwavelength-engineered optical antenna on a conventional 220 nm SOI platform, presenting a measured far-field beam divergence of 0.1° and a wavelength scanning sensitivity of 0.13°/nm.

Optical antennas are key components in optical phased arrays for light detection and ranging technology requiring long sensing range and high scanning resolution. To achieve a narrow beam width in the far-field region, antenna lengths of several millimeters or more are required. To date, such long antennas have been impossible to achieve in silicon waveguides because currently demonstrated technologies do not allow accurate control of grating strength. Here, we report on a new type of surface-emitting silicon waveguide with a dramatically increased antenna length of L = 3.65 m m . This is achieved by using a subwavelength metamaterial waveguide core evanescently coupled with radiative segments laterally separated from the core. This results in a far-field diffracted beam width of 0.025°, which is a record small beam divergence for a silicon photonics surface-emitting device. We also demonstrate that by using a design with L -shaped surface-emitting segments, the radiation efficiency of the antenna can be substantially increased compared to a conventional design, with an efficiency of 72% at the wavelength of 1550 nm.

Silicon nitride (SiNx), has been widely regarded as a CMOS photonics enabling material, facilitating the development of low-cost CMOS compatible waveguides and related photonic components. We have previously developed an NH3-free SiN PECVD platform in which its optical properties can be tailored. Here, we report on a new type of surface-emitting nitrogen-rich silicon nitride waveguide with antenna lengths of L > 5 mm. This is achieved by using a technique called small spot direct ultraviolet writing, capable of creating periodic refractive index changes ranging from -0.01 to -0.04. With this arrangement, a weak antenna radiation strength can be achieved, resulting in far-field beam widths < 0.015 0 , while maintaining a minimum feature size equal to 300 nm, which is compatible with DUV scanner lithography.

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Integrated optical antennas are relevant devices for the development of next-generation LIDAR systems. Here we experimentally demonstrate a new topology to implement long antennas in silicon-on-insulator platform. The designed 2-millimeter-long antenna presents a measured far-field beam divergence of 0.1°and a wavelength sensitivity of 0.13°/nm.