Silicon nitride CMOS platform for integrated optical phased arrays applications

Ilie, S. T.; Ginel‐Moreno, Pablo; Sagar, James; Bucio, Thalía Domínguez; Ortega‐Moñux, Alejandro; Lekkas, Konstantinos; Rutirawut, Teerapat; Mastronardi, Lorenzo; Skandalos, Ilias; Grabska, Katarzyna; Molina-Fernández, Í.; Kanellos, George T.; Cheben, Pavel; Gardès, Frédéric

doi:10.1109/gfp51802.2021.9673980

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Lithium Niobate Modulators1

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2022

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“…Vanachere et al have shown the successful integration of LN with LPCVD SiN-deposited thin layers, owing to a half-wave voltage-length product of 5.5V•cm and insertion losses of 7 dB [111]. Despite the technical challenges associated with the integration of LN with SiN, it can enable applications such as LiDAR [112] and quantum computing [113].…”

Section: Lithium Niobate Modulatorsmentioning

confidence: 99%

A Review of Capabilities and Scope for Hybrid Integration Offered by Silicon-Nitride-Based Photonic Integrated Circuits

Gardes

Shooa

Paoli

et al. 2022

Sensors

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In this review we present some of the recent advances in the field of silicon nitride photonic integrated circuits. The review focuses on the material deposition techniques currently available, illustrating the capabilities of each technique. The review then expands on the functionalisation of the platform to achieve nonlinear processing, optical modulation, nonvolatile optical memories and integration with III-V materials to obtain lasing or gain capabilities.

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Section: Lithium Niobate Modulatorsmentioning

confidence: 99%