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2D transition metal chalcogenides (TMCs) and dichalcogenides (TMDCs) are promising candidates for next‐generation electronic devices and sensors. Herein, the fabrication and characterizations of back‐gated Si/SiO2/GaSe‐based (GaSe: gallium selenide) metal–oxide–semiconductor field‐effect transistors (MOSFETs) and top‐gated Gr/h‐BN/GaSe‐based (h‐BN: hexagonal boron nitride) metal–insulator–semiconductor field‐effect transistors (MISFETs) with a common active layer (GaSe) are reported. The morphological, electrical, and optoelectronic properties are investigated, and the device is found to exhibit p‐type behavior with good electrical tunability. At a laser power of 1.147 μW, the device exhibits a photoresponsivity of 90 mA W−1, ION/IOFF ratios exceeding 104, and long decay times. These promising experimental results can promote the application of GaSe‐based MISFETs in multifunctional electronic devices.