Optoelectronic properties of two-dimensional molybdenum diselenide dual-gated MISFET-based photodetector

Jung, Pan-Gum; Oh, Jong‐Min; Kim, Nam–Hoon; Abderrahmane, Abdelkader

doi:10.1016/j.ijleo.2020.165427

Cited by 3 publications

(1 citation statement)

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“…[2][3][4] In our recent research, we reported the possibility of replacing the thick heterostructures of Si/SiO 2 /MoSe 2 using only 2D materials with heterostructures Gr/h-BN/MoSe 2 (h-BN: hexagonal boron nitride) on the same device with similar electrical and optoelectronic properties. [5] Recently, Zhang et al proposed a new application for FETs with 2D materials as the channel, as memtransistors. [6] In this study, we fabricated a new heterostructure based on 2D p-type gallium selenide (GaSe).…”

Section: Introductionmentioning

confidence: 99%

Dual‐Gate Graphene/h‐BN/GaSe Metal–Insulator–Semiconductor Field‐Effect Transistor (MISFET)

Abderrahmane

Jung

Woo

et al. 2022

Physica Status Solidi (a)

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2D transition metal chalcogenides (TMCs) and dichalcogenides (TMDCs) are promising candidates for next‐generation electronic devices and sensors. Herein, the fabrication and characterizations of back‐gated Si/SiO2/GaSe‐based (GaSe: gallium selenide) metal–oxide–semiconductor field‐effect transistors (MOSFETs) and top‐gated Gr/h‐BN/GaSe‐based (h‐BN: hexagonal boron nitride) metal–insulator–semiconductor field‐effect transistors (MISFETs) with a common active layer (GaSe) are reported. The morphological, electrical, and optoelectronic properties are investigated, and the device is found to exhibit p‐type behavior with good electrical tunability. At a laser power of 1.147 μW, the device exhibits a photoresponsivity of 90 mA W−1, ION/IOFF ratios exceeding 104, and long decay times. These promising experimental results can promote the application of GaSe‐based MISFETs in multifunctional electronic devices.

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