Recent advances in the design and development of magnetic storage devices have led to an enormous interest in materials with perpendicular magnetic anisotropy (PMA) property. The past decade has witnessed a huge growth in the development of flexible devices such as displays, circuit boards, batteries, memories, etc. since they have gradually made an impact on people’s lives. Thus, the integration of PMA materials with flexible substrates can benefit the development of flexible magnetic devices. In this study, we developed a heteroepitaxy of BaFe12O19 (BaM)/muscovite which displays both mechanical flexibility and PMA property. The particular PMA property was characterized by vibrating sample magnetometer, magnetic force microscopy, and x-ray absorption spectroscopy. To quantify the PMA property of the system, the intrinsic magnetic anisotropy energy density of ~2.83 Merg cm−3 was obtained. Furthermore, the heterostructure exhibits robust PMA property against severe mechanical bending. The findings of this study on the BaM/muscovite heteroepitaxy have several important implications for research in next-generation flexible magnetic recording devices and actuators.

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Polar domain walls in centrosymmetric ferroelastics induce inhomogeneity that is the origin of advantageous multifunctionality. In particular, polar domain walls promote charge‐carrier separation and hence are promising for energy conversion applications that overcome the hurdles of the rate‐limiting step in the traditional photoelectrochemical water splitting processes. Yet, while macroscopic studies investigate the materials at the device scale, the origin of this phenomenon in general and the emergence of polar domain walls during the structural phase transition in particular has remained elusive, encumbering the development of this attractive system. Here, it is demonstrated that twin domain walls arise in centrosymmetric BiVO4 films and they exhibit localized piezoelectricity. It is also shown that during the structural phase transition from the tetragonal to monoclinic, the symmetry reduction is accompanied by an emergence of strain gradient, giving rise to flexoelectric effect and the polar domain walls. These results not only expose the emergence of polar domain walls at centrosymmetric systems by means of direct observation, but they also expand the realm of potential application of ferroelastics, especially in photoelectrochemistry and local piezoelectricity.

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In modern technology, recent advances in multi-functional devices are rapidly developed for the diverse demands of human beings. Meanwhile, durability and adaptability to extreme environmental conditions are also required. In this study, a flexible magnetoelectric (ME) heterostructure based on CoFe2O4/Pb(Zr,Ti)O3 composite thin film on muscovite is presented, with two geometries of the constituents, namely laminar heterostructure, and vertical nanostructure, adopted for the comparison. On the other hand, credited to the mechanical flexibility of muscovite, the impact of flexibility on ME properties is also discussed with a series of bending tests. Moreover, the ME response sustains for 10,000 times bending without significant decrease, validating the mechanical durability of this heterostructure on muscovite. With these advantages, a flexible proximity sensor based on this heterostructure is demonstrated for motion detection. It is expected to offer a pathway for creating the next-generational flexible devices, showing potential for future practical application.