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The need of clean energy is constantly increasing, and Building Integrated PhotoVoltaic (BIPV) technologies represent valuable assets to expand even further the photovoltaic market. Thanks to BIPVs. a new concept of local electric microgrid will probably emerge as this kind of technology can turn buildings from energy wells to energy sources. Luminescent Solar Concentrator (LSC) panels are perfect to achieve this goal, indeed, contrary to standard flat PhotoVoltaic (PV) modules, they can be exploited in transparent or semi-transparent building façades. Thus, the purpose of this work was the optimization of the performance of LSC panels for BIPV applications. Being an application-oriented study, we paid particular attention to the scalability of the assembling process and the use of LSC slabs functionalized only with widely available organic commercial dyes and high-performance commercial silicon solar cells. The electrical and optical performance of the LSC panels were firstly simulated and then, once the most promising configurations were identified, the respective prototypes were assembled to compare the simulation results with the experimental measurements. These analyses were performed both under uniform illumination and in some relevant shading configurations typical for BIPV devices in operating conditions. The obtained results show that LSC panels that employ PV cells coupled with reflective films can yield a higher efficiency than a traditional system with cells placed along four sides.

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We report on the epitaxial growth of Ge virtual substrates directly on Si (001) and on different porosity porous silicon (pSi) buffers. Obtained results indicate that Ge grown on low porosity (22%) pSi buffer has a better crystalline quality compared to Ge grown on bulk Si and on higher porosity buffers. This result is attributed to the compliant nature of pSi and to its reduced Young’s modulus, which leads to plastic tensile deformation of the 22% porosity buffer under the in-plane tensile stress introduced by Ge lattice. The same result is not observed for higher porosity buffers, this effect being attributed to the higher buffer fragility. A low porosity pSi layer can hence be used as buffer for the growth of Ge on Si virtual substrates with reduced dislocation content and for the growth of Ge based devices or the successive integration of III-V semiconductors on Si