International audienceThermal conductivity and thermal interface resistance of tungsten thin films were investigated by means of pulsed photothermal radiometry. The experimental system based on a nanosecond pulsed laser and a high-speed IR photodetector is presented. Calibration of the IR detector is described. The thermal properties of the samples are identified by comparison with an analytical solution of the heat transfer equation for layered samples already presented in the literature. The experimental system enables investigation of micron and sub-micron thick metallic films. The investigated films were deposited by magnetron sputtering on iron substrates using two different deposition conditions. The measured thermal conductivity values ranged from 40 to 62 W.m−1.K−1 and thermal contact resistances from 0.05 to 1.1 10−8 m2.K.W−1

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Pulsed DC magnetron sputtering is used for deposition of large area crystalline (200 mm) silicon 100nm thin films. p doped Si substrates are flashed (T s = 900 °C) under high vacuum (5 10-6 Pa) for removing native oxide and restoring surface crystallinity. Subsequent boron doped Si homoepitaxy is obtained at substrate temperature below 500°C for pulse frequency of 150 kHz.