Herein, an optimized process flow of near‐surface quantum well metal–oxide–semiconductor field‐effect transistors (MOSFETs) based on planar layers of metalorganic vapor‐phase epitaxy (MOVPE) grown InxGa1−xAs is presented. It is found that by an optimized pre‐growth cleaning and post‐metal anneal, the quality of the MOS structure can be greatly enhanced. This optimization is a first step toward realization of a scalable platform for topological qubits based on a well‐defined network of lateral InxGa1−xAs nanowires grown by selective area growth.

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Recent work showing a strong quality improvement of the Si/SiO2 material system by low temperature atomic hydrogen annealing, and the fact that III-V semiconductors outperform Si in many applications makes the investigation of atomic hydrogen annealing on III-V/high-k interfaces to a very interesting topic. In this work, the potential of atomic hydrogen annealing as a low temperature annealing treatment of InGaAs metal-oxide-semiconductor field-effect transistors (MOSFETs) is presented and compared to conventional annealing in a rapid thermal process (RTP) system using forming gas. It is found that post metal annealing (PMA) in atomic hydrogen greatly enhances the quality of the metal-oxide-semiconductor structure in terms of effective mobility, minimum subthreshold swing, and reliability. The device performance is comparable to RTP annealing but can be performed at a lower temperature, which opens up for integration of more temperature-sensitive materials in the device stack.