Nous savons que les équations de Fresnel appliquées à des dioptres supposés, parfaitement plans et homogènes, ne permettent pas de rendre compte des courbes de réflexion spéculaire fournies par des échantillons massifs ou en couche mince. Nos considérations sur divers processus de diffusion élastique ou inélastique, montrent que seule la diffusion élastique introduite par les irrégularités ou inhomogénéités de surface est importante pour l'analyse de ces courbes. Nous proposons quelques modèles de rugosité et en précisons les domaines de validité aussi bien pour la réflexion spéculaire, que pour la réflexion diffuse (suivant la loi des réseaux). Ces modèles sont comparés avec les courbes expérimentales obtenues sur des échantillons massifs de titane, de silicium et de germanium, avec les rayonnements Kα 1 du cuivre ou du chrome
From theoretical simulations, an indirect method entitled `sandwich stacking' has already been suggested for the analysis of the outer atomic layers of thin films. By means of a new suitable deposit (with the same material and the same thickness as the substrate) these outer foreign layers, if any, are embedded within a homogeneous film. When such stackings are analysed by X‐rays at grazing reflexion (either specular or diffuse), a change in the interference‐pattern contrast appears and provides a quantitative determination of the height distribution of foreign atoms. In this paper, the method is applied first to silver films exposed for a time at room temperature and secondly to multilayer films of the types Au–Cu–Au and Au–Ag–Au, in which the copper and silver layers typically proceed from an epitaxic growth on the gold (111) planes. In such an investigation the roughness of the various interfaces in the stacking must be taken into account and therefore a roughness model has been tested for X‐ray specular reflexion from glass substrates (float‐glass as delivered, or borosilicate crown glass optically polished) and also from gold or silver films evaporated on a glass substrate in an ultra‐high vacuum.
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