An active matrix monolithic micro‐LED full‐color micro‐display with a pixel density of 317 ppi is demonstrated. Starting from large‐scale and low‐cost GaN‐on‐Si epilayers, monolithic 64 × 36 blue micro‐LED arrays are fabricated and further transformed to full‐color micro‐displays by applying a photo‐patternable color conversion layer. This full‐color fabrication scheme shows feasible manufacturability, suggesting a potential for volume production of micro‐LED full‐color micro‐display.

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In this paper, fabrication processes of a 0.55-inch 400 × 240 high-brightness active-matrix micro-light-emitting diode (LED) display using GaN-on-Si epi-wafers are described. The micro-LED array, featuring a pixel size of 20 µm × 20 µm and a pixel density of 848 pixels per inch (ppi), was fabricated and integrated with a custom-designed CMOS driver through Au-Sn flip-chip bonding. Si growth substrate was removed using a crack-free wet etching method. Four-bit grayscale images and videos are clearly rendered. Optical crosstalk is discussed and can be mitigated through micro-LED array design and process modification. This high-performance, high-resolution micro-LED display demonstration provides a promising and cost-effective solution towards mass production of micro-displays for VR/AR applications.