Active Matrix Monolithic LED Micro-Display Using GaN-on-Si Epilayers

Zhang, Xu; Li, Peian; Zou, Xinbo; Jiang, Junmin; Yuen, Shing Hin; Tang, Ching Wan; Lau, Kei May

doi:10.1109/lpt.2019.2910729

Cited by 76 publications

(40 citation statements)

References 17 publications

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“…Dawson's group fabricated flexible μ-LED arrays and then performed the first demonstration of visible light communication with a 40-MHz modulation bandwidth and 120-Mbit/s data transmission rate 3 . Lau's group has been studying microdisplays for more than a decade [4][5][6][7] . They reported μ-LED displays with 360 pixels per inch (PPI) in 2012 and 1700 PPI in 2014.…”

Section: Introductionmentioning

confidence: 99%

Micro-light-emitting diodes with quantum dots in display technology

et al. 2020

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Micro-light-emitting diodes (μ-LEDs) are regarded as the cornerstone of next-generation display technology to meet the personalised demands of advanced applications, such as mobile phones, wearable watches, virtual/ augmented reality, micro-projectors and ultrahigh-definition TVs. However, as the LED chip size shrinks to below 20 μm, conventional phosphor colour conversion cannot present sufficient luminance and yield to support highresolution displays due to the low absorption cross-section. The emergence of quantum dot (QD) materials is expected to fill this gap due to their remarkable photoluminescence, narrow bandwidth emission, colour tuneability, high quantum yield and nanoscale size, providing a powerful full-colour solution for μ-LED displays. Here, we comprehensively review the latest progress concerning the implementation of μ-LEDs and QDs in display technology, including μ-LED design and fabrication, large-scale μ-LED transfer and QD full-colour strategy. Outlooks on QD stability, patterning and deposition and challenges of μ-LED displays are also provided. Finally, we discuss the advanced applications of QD-based μ-LED displays, showing the bright future of this technology.

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Section: Introductionmentioning

confidence: 99%

Micro-light-emitting diodes with quantum dots in display technology

et al. 2020

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“…On the other hand, the Si substrate can be easily removed using a standard dry or wet etching processes. Multiple micro‐LED micro‐displays have been successfully developed using GaN‐on‐Si epilayers 19,20 …”

Section: Introductionmentioning

confidence: 99%

Active matrix monolithic micro‐LED full‐color micro‐display

Zhang

Chong

et al. 2020

J Soc Info Display

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An active matrix monolithic micro‐LED full‐color micro‐display with a pixel density of 317 ppi is demonstrated. Starting from large‐scale and low‐cost GaN‐on‐Si epilayers, monolithic 64 × 36 blue micro‐LED arrays are fabricated and further transformed to full‐color micro‐displays by applying a photo‐patternable color conversion layer. This full‐color fabrication scheme shows feasible manufacturability, suggesting a potential for volume production of micro‐LED full‐color micro‐display.

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“…Micro-LEDs grown on Si substrate were once regarded as mainstream, due to the compatibility with the existing manufacturing process. However, they often suffered from low efficiency [14,15]. There has also been much work to improve the light extraction efficiency (LEE) of the devices and display panels [16][17][18] in order to achieve better external quantum efficiency (EQE).…”

Section: Introductionmentioning

confidence: 99%

Investigation of Electrical Properties and Reliability of GaN-Based Micro-LEDs

et al. 2020

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In this paper, we report high-performance Micro-LEDs on sapphire substrates, with pixel size scaling to 20 µm and an ultra-high current density of 9902 A/cm2. The forward voltages (VF) of the devices ranged from 2.32 V to 2.39 V under an injection current density of 10 A/cm2. The size and structure-dependent effects were subsequently investigated to optimize the device design. The reliability of Micro-LED devices was evaluated under long-aging, high-temperature, and high-humidity conditions. It was found that Micro-LED devices can maintain comparable performance with an emission wavelength of about 445 nm and a full width at half maximum (FWHM) of 22 nm under extreme environments. Following this, specific analysis with four detailed factors of forward voltage, forward current, slope, and leakage current was carried out in order to show the influence of the different environments on different aspects of the devices.

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Active Matrix Monolithic LED Micro-Display Using GaN-on-Si Epilayers

Cited by 76 publications

References 17 publications

Micro-light-emitting diodes with quantum dots in display technology

Micro-light-emitting diodes with quantum dots in display technology

Active matrix monolithic micro‐LED full‐color micro‐display

Investigation of Electrical Properties and Reliability of GaN-Based Micro-LEDs

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