Atomically thin 2D-layered transition-metal dichalcogenides have been studied extensively in recent years because of their intriguing physical properties and promising applications in nanoelectronic devices. Among them, ReSe2 is an emerging material that exhibits a stable distorted 1T phase and strong in-plane anisotropy due to its reduced crystal symmetry. Here, the anisotropic nature of ReSe2 is revealed by Raman spectroscopy under linearly polarized excitations in which different vibration modes exhibit pronounced periodic variations in intensity. Utilizing high-quality ReSe2 nanosheets, top-gate ReSe2 field-effect transistors were built that show an excellent on/off current ratio exceeding 10(7) and a well-developed current saturation in the current-voltage characteristics at room temperature. Importantly, the successful synthesis of ReSe2 directly onto hexagonal boron nitride substrates has effectively improved the electron motility over 500 times and the hole mobility over 100 times at low temperatures. Strikingly, corroborating with our density-functional calculations, the ReSe2-based photodetectors exhibit a polarization-sensitive photoresponsivity due to the intrinsic linear dichroism originated from high in-plane optical anisotropy. With a back-gate voltage, the linear dichroism photodetection can be unambiguously tuned both in the electron and hole regime. The appealing physical properties demonstrated in this study clearly identify ReSe2 as a highly anisotropic 2D material for exotic electronic and optoelectronic applications.

Oxygen migration is reported as key factors of resistive switching in graphene oxide (GO) based memories by different groups. A flexible nonvolatile resistive switching memory based on GO was fabricated through a spin-coating process. The speed of the SET and RESET operations of the GO memories was found to be significant asymmetric. The RESET speed is in the order of 100 ns under a −5 V voltage while the SET speed is three orders of magnitude slower (100 μs) under a 5 V bias. The behavior of resistive switching speed difference is elucidated by voltage modulated oxygen diffusion barrier change.

We report a structure with 4 thin film layers composed of pure metal and dielectric materials and prepared by sputtering. The reflectance and transmittance are lower than 5% with the absorption to be achieved higher than 95% in the 400-1000nm wavelength region as match to the solar radiance spectrum. The thermal emittance of the structure is in the range of 0.063-0.10 through data analysis. The good reproducibility and stability of spectral data associated with the deposition process imply the advantage of the solar energy absorber which is cost-effective in application.

With continuous research into two‐dimensional transition metal dichalcogenides (TMDs), a great number of high‐performance devices are emerging due to the unique structures and versatile properties of TMDs. As a representative of the group‐VII TMDs, rhenium disulfide (ReS2) has attracted increasing attention because the distorted octahedral crystal structure makes it distinctive from more widely known TMDs members, such as MoS2 and WSe2. It features layer‐independent electrical and anisotropic optical properties which are suitable for the applications of field effect transistors (FETs) and photodetectors. This review focuses on the recent research work about the electronic and optoelectronic applications based on novel 2D ReS2. In the first part, the unique crystal structures and properties are introduced. This is followed by the various preparation methods. Next, high‐performance FETs and photodetectors based on ReS2 are presented. Finally, conclusions are drawn and prospects proposed.

Metallic super‐hydrophobic surfaces with ultralow water adhesion are essential for a wide variety of applications, such as enhanced condensation heat transfer and anti‐icing applications. Broccoli‐like multiscale micro‐ and nanostructures composed of four different microscale and nanoscale features are fabricated on different metal surfaces by an inexpensive nanosecond laser system in this study. The surface shows high stability during evaporation, and the surface water adhesion of this structure is only 1.4 ± 0.4 µN, much lower than that of typical reported surfaces. Slight changes to the surface morphology results in an increase in the surface water adhesion, and this unique broccoli‐like surface structure shows an much better anti‐frost ability compared with similar structures with slightly higher water adhesion. The results provide a cost‐effective method to achieve large‐area metallic super‐hydrophobic surfaces with extremely low water adhesion and superior anti‐frost ability.