No abstract

The etching of single-crystal silicon, CVD polysilicon, thermally grown silicon oxides, and Ni-Cr masks have been studied using a chemical-assisted ion beam etching (CAIBE) process. Etch rates were measured as functions of C13 gas flow rate, Ar § ion beam energy, and beam current density. Selectivities of Ni-Cr:Si, Ni-Cr:poly, and Ni-Cr:SiO3 of 1:10, 1:9, and 1:4 were determined. Vertical profiles were obtained down to at least 100 nm linewidths using CAIBE. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 130.88.90.140 Downloaded on 2015-04-03 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 130.88.90.140 Downloaded on 2015-04-03 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 130.88.90.140 Downloaded on 2015-04-03 to IP

A chemically assisted ion beam etching process with Cl2 as the reactive gas is described and etch rates are measured for Si, polysilicon, SiO2, and Ni‐Cr etching as a function of ion beam current density, ion beam energy, and Cl2 flow rates.