The electronic properties of organic semiconductors depend strongly on the nature of the molecules, their conjugation and conformation, their mutual distance and the orientation between adjacent molecules. Variations of intramolecular distances and conformation disturb the conjugation and perturb the delocalization of charges. As a result, the mobility considerably decreases compared to that of a covalently well-organized crystal. Here, we present electrical characterization of large single crystals made of the regioregular octamer of 3-hexyl-thiophene (3HT)8 using a conductive-atomic force microscope (C-AFM) in air. We find a large anisotropy in the conduction with charge mobility values depending on the crystallographic orientation of the single crystal. The smaller conduction is in the direction of π-π stacking (along the long axis of the single crystal) with a mobility value in the order of 10(-3) cm(2) V(-1) s(-1), and the larger one is along the molecular axis (in the direction normal to the single crystal surface) with a mobility value in the order of 0.5 cm(2) V(-1) s(-1). The measured current-voltage (I-V) curves showed that along the molecular axis, the current followed an exponential dependence corresponding to an injection mode. In the π-π stacking direction, the current exhibits a space charge limited current (SCLC) behavior, which allows us to estimate the charge carrier mobility.
Interfaces are inherent in and essential to organic electronic devices. At every interface, both organic/organic and organic/inorganic, the potential to utilize nanostructuring to control device performance is very high. In this paper, we focus on one example of nanostructuring at the donor/acceptor heterojunction in organic photovoltaics, with the purpose of modifing efficiency by four orders of magnitude. We show that the length of the exciton dissociating interface can be tuned by changing the substrate temperature for small molecule heterojunction photodiodes based on crystalline DIP/C60 mixtures. Due to the tuneable interface morphology, the performance of such devices can be changed from poor performing planar heterojunctions to higher efficiency ordered nanoscale bulk heterojunction structures. In this way, highly crystalline DIP can be thought of as a natural “bulk” heterojunction.
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