The piezoelectric stress constants el, of In%, InAs, GaSb, GaAs, and AlSb have been measured at room temperature and found to be 0.071; 0.045; 0.13; 0.16, and 0.068 C/mZ respectively. If the 111-V compound crystals are expanded in the <111) direction, the A-faces (metal atoms) become negatively charged, in contrast to 11-VI compounds, in which the equivalent faces become positively charged. Using a model of a layered lattice, we show that three different mechanisms may contribute to the piezoelectric effect. These mechanisms are 1. the internal displacement of the ionic charge, 2. the internal displacement of the electronic charge. 3. the change in ionicity due to strain.

No abstract

No abstract

No abstract

The pieZOeleCtFiC constants el, and e14 of tellurium have been found by measurement to be 0.42 C m-2 and 0.17 C m-2. They are described by strain-induced displacement of the electron distribution relative to the Te cores.In Tellur wurden die piezoelektrischen Konstanten gemessen. Man erhalt fur el, und eI4 die Werte 0,42 0 m+ und 0,17 C m-2. Der Piezoeffekt in Tellur wird aufgefalt als Umverteilung der Elektronendichte gegen die Telluratomriimpfe bei Verzerrung des Gitters.