Electronic Displacement in Tellurium by Mechanical Strain

Arlt, G.; Quadflieg, Peter

doi:10.1002/pssb.19690320220

Cited by 29 publications

(12 citation statements)

References 6 publications

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“…The topological phase transition from a trivial semiconductor to a Weyl semimetal (WSM) is predicted under applied external pressure when the spin-polarized uppermost VBs and CB are inverted across the band gap 8 , 24 . Since a strong piezoelectric effect has been reported in bulk and nanostructured Te 25 – 27 , strain can also be generated in response to an applied electric field and vice versa. The response of the electronic structure to laser excitation could enable manipulation and control of topological phases in Te.…”

Section: Introductionmentioning

confidence: 99%

Ultrafast photoinduced band splitting and carrier dynamics in chiral tellurium nanosheets

et al. 2020

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Trigonal tellurium (Te) is a chiral semiconductor that lacks both mirror and inversion symmetries, resulting in complex band structures with Weyl crossings and unique spin textures. Detailed time-resolved polarized reflectance spectroscopy is used to investigate its band structure and carrier dynamics. The polarized transient spectra reveal optical transitions between the uppermost spin-split H 4 and H 5 and the degenerate H 6 valence bands (VB) and the lowest degenerate H 6 conduction band (CB) as well as a higher energy transition at the Lpoint. Surprisingly, the degeneracy of the H 6 CB (a proposed Weyl node) is lifted and the spin-split VB gap is reduced upon photoexcitation before relaxing to equilibrium as the carriers decay. Using ab initio density functional theory (DFT) calculations, we conclude that the dynamic band structure is caused by a photoinduced shear strain in the Te film that breaks the screw symmetry of the crystal. The band-edge anisotropy is also reflected in the hot carrier decay rate, which is a factor of two slower along the c-axis than perpendicular to it. The majority of photoexcited carriers near the band-edge are seen to recombine within 30 ps while higher lying transitions observed near 1.2 eV appear to have substantially longer lifetimes, potentially due to contributions of intervalley processes in the recombination rate. These new findings shed light on the strong correlation between photoinduced carriers and electronic structure in anisotropic crystals, which opens a potential pathway for designing novel Te-based devices that take advantage of the topological structures as well as strong spin-related properties.

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Section: Introductionmentioning

confidence: 99%

Ultrafast photoinduced band splitting and carrier dynamics in chiral tellurium nanosheets

et al. 2020

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“…Based on the crystal structure of the t‐Te NW illustrated in the schematic diagram at the bottom of Figure 1a, the piezoelectric potential is generated only by the strain in the {001} plane;22 thus, it is predicted that adjustments of the longitudinal direction of the t‐Te NW to the bending line as well as the facial packing are required at the same time to generate piezoelectric power from the t‐Te NWs. The mechanism for the generation of the piezoelectric potential from the ideally designed NG given these two conditions is explained qualitatively as follows.…”

mentioning

confidence: 99%

High‐Power Density Piezoelectric Energy Harvesting Using Radially Strained Ultrathin Trigonal Tellurium Nanowire Assembly

Lee¹,

Lee²,

Lee³

et al. 2013

Advanced Materials

164

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A high-yield solution-processed ultrathin (<10 nm) trigonal tellurium (t-Te) nanowire (NW) is introduced as a new class of piezoelectric nanomaterial with a six-fold higher piezoelectric constant compared to conventional ZnO NWs for a high-volume power-density nanogenerator (NG). While determining the energy-harvesting principle in a NG consisting of t-Te NW, it is theoretically and experimentally found that t-Te NW is piezoelectrically activated only by creating strain in its radial direction, along which it has an asymmetric crystal structure. Based upon this mechanism, a NG with a monolayer consisting of well-aligned t-Te NWs and a power density of 9 mW/cm(3) is fabricated.

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“…3 )tellurium [19]. The chirality of the covalent-bond helices determines the polarities of many physical properties, such as the angular-momentum texture in the k space [20][21][22], natural optical rotatory power [23][24][25][26], secondharmonic generation [27], piezoelectricity [28,29], shapes of etch pits [30], resonant diffraction with circularly polarized x rays [31,32], polarized neutron scattering [33], and NMR chemical shift [34] (see Supplemental Material [19]).…”

Section: Crystal and Electronic Structures Of Trigonal Telluriummentioning

confidence: 99%

Chirality-Induced Electrical Generation of Magnetism in Nonmagnetic Elemental Tellurium

Furukawa,

Watanabe,

Ogasawara

et al. 2020

Preprint

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Chiral matter has a structure that lacks inversion, mirror, and rotoreflection symmetry; thus, a given chiral material has either a right-or left-handed structure. In chiral matter, electricity and magnetism can be coupled in an exotic manner beyond the classical electromagnetism (e.g., magneto chiral effect in chiral magnets). In this paper, we give a firm experimental proof of the linear electric-current-induced magnetization effect in bulk nonmagnetic chiral matter elemental trigonal tellurium. We measured a 125 Te nuclear magnetic resonance (NMR) spectral shift under a pulsed electric current for trigonal tellurium single crystals. We provide general symmetry considerations to discuss the electrically (electric-field-and electric-current-) induced magnetization and clarify that the NMR shift observed in trigonal tellurium is caused by the linear current-induced magnetization effect, not by a higher-order magnetoelectric effect. We also show that the current-induced NMR shift is reversed by a chirality reversal of the tellurium crystal structure. This result is the first direct evidence of crystal-chirality-induced spin polarization, which is an inorganic-bulk-crystal analogue of the chirality-induced spin selectivity in chiral organic molecules. The present findings also show that nonmagnetic chiral crystals may be applied to spintronics and coil-free devices to generate magnetization beyond the classical electromagnetism.

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Electronic Displacement in Tellurium by Mechanical Strain

Cited by 29 publications

References 6 publications

Ultrafast photoinduced band splitting and carrier dynamics in chiral tellurium nanosheets

Ultrafast photoinduced band splitting and carrier dynamics in chiral tellurium nanosheets

High‐Power Density Piezoelectric Energy Harvesting Using Radially Strained Ultrathin Trigonal Tellurium Nanowire Assembly

Chirality-Induced Electrical Generation of Magnetism in Nonmagnetic Elemental Tellurium

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