BiFeO 3 and BaTiO 3 were used to grow homogeneous composite thin films and multilayer heterostructures with 15 double layers by pulsed laser deposition. The perpendicular strain of the films was tuned by employing different substrate materials, i.e. SrTiO 3 (0 0 1), MgO(0 0 1) and MgAl 2 O 4 (0 0 1). Multiferroic properties have been measured in a temperature range from room temperature down to 2 K. The composite films show a high ferroelectric saturation polarization of more than 70 µC cm −2 . The multilayers show the highest magnetization of 2.3 emu cm −3 , due to interface magnetic moments and exchange coupling of the included weak ferromagnetic phases. The magnetoelectric coupling of the BaTiO 3 -BiFeO 3 films was investigated by two methods. While the ferroelectric hysteresis loops in magnetic fields up to 8 T show only minor changes, a direct longitudinal AC method yields a magnetoelectric coefficient α ME = ∂E/∂H of 20.75 V cm −1 Oe −1 with a low µ 0 H DC of 0.25 T for the 67% BaTiO 3 -33% BiFeO 3 composite film at 300 K. This value is close to the highest reported in the literature.
Multiferroic (BaTiO3-BiFeO3) × 15 multilayer heterostructures show high magnetoelectric (ME) coefficients αME up to 24 V/cm·Oe at 300 K. This value is much higher than that of a single-phase BiFeO3 reference film (αME = 4.2 V/cm·Oe). We found clear correlation of ME coefficients with increasing oxygen partial pressure during growth. ME coupling is highest for lower density of oxygen vacancy-related defects. Detailed scanning transmission electron microscopy and selected area electron diffraction microstructural investigations at 300 K revealed antiphase rotations of the oxygen octahedra in the BaTiO3 single layers, which are an additional correlated defect structure of the multilayers.
Multiferroic superlattices consisting of 15 double layers BaTiO3–BiFeO3 show a very high magnetoelectric voltage coefficient αME of up to 49 V cm−1 Oe−1 at 300 K, measured at 1 kHz with zero direct current (DC) bias magnetic field. However, the microscopic origins of such high αME values, and the temperature and DC magnetic field dependencies of αME are not understood up to now. Therefore, in this study two superlattices grown at high/low oxygen partial pressures having high/low αME values, respectively, are compared. While at high growth pressure the strain contrast in high‐resolution transmission electron microscopy images is limited to few layers at the substrate interface, the low‐pressure sample shows much more pronounced microstrain. This is additionally visualized in Fourier transformed images, and the out‐of‐plane lattice parameter of the single BaTiO3 layer is increased near the interface. In addition to a low density of oxygen vacancies, it seems to be important to avoid micromechanical clamping of the 2D single‐phase nanolayers of the multiferroic BaTiO3–BiFeO3 superlattices to achieve high magnetoelectric coupling.
Epitaxial multiferroic BaTiO3-BiFeO3 composite thin films exhibit a correlation between the magnetoelectric (ME) voltage coefficient αME and the oxygen partial pressure during growth. The ME coefficient αME reaches high values up to 43 V/(cm·Oe) at 300 K and at 0.25 mbar oxygen growth pressure. The temperature dependence of αME of the composite films is opposite that of recently-reported BaTiO3-BiFeO3 superlattices, indicating that strain-mediated ME coupling alone cannot explain its origin. Probably, charge-mediated ME coupling may play a role in the composite films. Furthermore, the chemically-homogeneous composite films show an oxygen vacancy superstructure, which arises from vacancy ordering on the {111} planes of the pseudocubic BaTiO3-type structure. This work contributes to the understanding of magnetoelectric coupling as a complex and sensitive interplay of chemical, structural and geometrical issues of the BaTiO3-BiFeO3 composite system and, thus, paves the way to practical exploitation of magnetoelectric composites.
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