ZnO multilayers and pure ZnO thin films were deposited onto glass using a sputtering system, and were subsequently characterized by X-ray diffractometry and UV-Vis spectroscopy. The resistivity of the samples was measured by the four-probe method. All films exhibited preferential orientation along the c-axis and the peak position (002) shifted to a lower position, indicating a reduction in the unit cell size. The pure ZnO thin film exhibited a maximum transmittance of approximately 98%, which decreased as the Nb layer increased, thus increasing the absorbance of the multilayer thin films. The energy band gap decreased as the thickness of the metal increased which higher value was 3.18 eV. The resistivity had a minimum of 0.1 × 10-4 Ω m.

In this work, we present results of synthesis, electric and structural characterization of Ruddlesden- Popper Lan+1Nin-xZnxO3n+1(n =1, 0<x<0.4) compounds. The samples were synthesized by combustion reaction method by using citric acid as fuel. The precursors obtained from this reaction were treated for 12 hours at 1100 °C in air. The polycrystalline samples were characterized by X-ray diffraction (XRD) and electric resistivity. The XRD results indicate that samples were obtained with single phase in the orthorhombic symmetry and space group I4/mmm. The preliminary results suggest that the Zn-doping plays an important role on the charge transport and modifies the manner that the holes are arranged in the system.