We successfully synthesized ZnSe nanoparticles (NPs) by using a hydrothermal method. Careful analyses of X-ray diffraction pattern and high-resolution transmission electron microscopy images showed that the synthesized ZnSe NPs with the size of ˜100 nm and sphere-like morphology crystallized in the zincblende/cubic structure (the F-43m space group). This was also confirmed based upon characteristic vibration modes recorded by using Raman scattering spectroscopy. The study on room-temperature absorption and photoluminescence (PL) spectra proved ZnSe NPs having high crystal quality with the band gap energy Eg≈2.63 eV at 300 K and excitonic emission peaked at ˜2.64 eV (469 nm). Particularly, as studying temperature-dependent PL spectra, we found the shift of the emission peak towards lower energies while the PL intensity decreased when temperature increased from 15 to 300 K. The PL spectral parameters were analyzed by using the Arrhenius and Varshni laws.

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CuO nanorods were prepared by thermal oxidation method in ozone ambient. The effect of annealing temprature in the range from 400 to 600 oC on morphology and structure of nanorods was studied thouroughly by scanning electron microscopy (SEM) and X-ray diffraction, combining with energy dispersive spectroscopy (EDS) and Raman spectroscopy. The results showed that annealing temprature strongly affected the structure and morphology of the produced CuO nanorods. The most uniform nanorods with highest crystal quality were obtained when annealing temperature is from 450 to 500 °C and annealing time was 2 h as suggested by SEM images together with Raman results.

We report a facile process to fabricate cuprous thin films by thermal oxidation of copper substrates. Structure and phase identification were studied by X-ray diffraction measurement and Raman spectroscopy. Scanning electron microscopy was utilized to study surface morphology of the as-fabricated thin films and optical properties of the samples were investigated by diffused reflectance spectroscopy. The study shows that cuprous thin films could be obtained by controlling annealing temperature in the region of 200-300 oC.