The scanning capacitance microscope ͑SCM͒ is a carrier-sensitive imaging tool based upon the well-known scanning-probe microscope ͑SPM͒. As reported in Edwards et al. ͓Appl. Phys. Lett. 72, 698 ͑1998͔͒, scanning capacitance spectroscopy ͑SCS͒ is a new data-taking method employing an SCM. SCS produces a two-dimensional map of the electrical pn junctions in a Si device and also provides an estimate of the depletion width. In this article, we report a series of microelectronics applications of SCS in which we image submicron transistors, Si bipolar transistors, and shallow-trench isolation structures. We describe two failure-analysis applications involving submicron transistors and shallow-trench isolation. We show a process-development application in which SCS provides microscopic evidence of the physical origins of the narrow-emitter effect in Si bipolar transistors. We image the depletion width in a Si bipolar transistor to explain an electric field-induced hot-carrier reliability failure. We show two sample geometries that can be used to examine different device properties.

Singular and nonsingular flat bands in a Sierpinski fractal‐like photonic lattice are reported. It is demonstrated that the lowest two bands, being isolated and degenerate due to geometrical frustration, are nonsingular and thus can be spanned by a complete set of compact localized states. These states are experimentally proven to propagate diffractionless in the photonic lattice. The results reveal the interplay between geometrical frustration, degenerate flat bands, and compact localized states in a single photonic lattice, and pave the way to photonic spin liquid ground states.

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This paper uses a physics-based TCAD degradation model to examine the accumulated stress damage of SiGe HBTs under pseudodynamic mixed-mode stress as a function of both electrical stress bias and temperature. The temperature dependence of mixed-mode stress damage is fully explored, beginning with impact-ionization calibration, and then by identifying and calibrating the dependence of scattering length and hydrogen diffusion parameters of the degradation model. After calibrating the model across electrical bias and temperature, the effectiveness and limitations of accumulated stress damage while varying electrical bias and while varying temperature are identified, and the implications of this aging model for circuit designers are discussed.Index Terms-Accumulated mixed-mode stress degradation, hot-carrier damage, lucky electron model, reliability, safe operating area (SOA), SiGe HBT, temperature dependence.

Photonic lattices have emerged as an ideal testbed for localizing light in space. Among others, the most promising approach is based on flat band systems and their related nondiffracting compact localized states. So far, only compact localized states arising from a single flat band have been found. Such states typically appear static, thus not allowing adaptive or evolutionary features of light localization. Here, we report on the first experimental realization of an oscillating compact localized state arising from multiple flat bands. We observe an oscillatory intensity beating during propagation in a two-dimensional photonic decorated Lieb lattice. The photonic system is realized by direct femtosecond laser writing and hosts most importantly multiple flat bands at different eigenenergies in its band structure. Our results open new avenues for evolution dynamics in the up to now static phenomenon of light localization in periodic waveguide structures and extend the current understanding of light localization in flat band systems.