No abstract

Experimental results show ESD level will become worse if more I/O pins are connected to the ground during I/O to I/O ESD zapping for the substrate pumped Bus Switch ICs. As a result, it will fail +1KV during I/O to all other I/Os HBM ESD zapping configuration. A new substrate-triggered ESD protection structure is proposed to increase the ESD robustness of this special bus switch product. The test results show the IC with this new ESD protection structure can pass +3kV HBM ESD test.