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The implementation of ultralow dielectric constant (k value ≈ 2) materials to reduce signal propagation delay in advanced electronic devices represents a critical challenge in next generations of microelectronics technologies. The introduction of well‐stacked and low polarity molecules that do not compromise film density may lead to improvements and desirable material engineering, as conventional porous SiOx derivatives exhibit detrimental degradation of thermo‐mechanical properties when their k values are further scaled down. This work presents a systematic engineering approach for controlling ultralow‐k amorphous boron nitride (aBN) deposition on 300 mm Si platforms. The results indicate that aBN grown from borazine precursor exhibits ultralow dielectric constant ≈2, high density, excellent mechanical strength, and extended thermodynamic stability. Unintentional boron ion doping during plasma dissociation that may induce artificial reductions of k value on n‐type substrates is alleviated by employing a remote microwave plasma process. Moreover, the adoption of low growth rate processes for ultralow‐k aBN deposition is found to be critical to provide for the superior mechanical strength and high density, and is attributed to the formation of hexagonal ring stacking frameworks. These results pave the way and offer engineering solutions for new ultralow‐k material introduction into future semiconductor manufacturing applications.
Polymeric coatings have been used in many ways from automobile paints to package coatings for integrated circuits. It is important to understand the mechanical properties of coatings in order to ensure fulfilling their designed functions. To measure these properties, in situ measurement techniques are desirable since these techniques measure the mechanical properties of coatings in the presence of the correct residual stress. In addition, the coatings most commonly used are multi-layer structures, a fact which increases the difficulty of the mechanical analysis. At present, the in situ mechanical behavior of multi-layer coatings has not been well characterized, and very few researchers have reported a satisfactory way to analyze multi-layer problems.
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