In this study, the impact of moisture on the electrical characteristics of an amorphous In–Ga–Zn–O thin-film transistor (a-IGZO TFT) was investigated. In commercial applications of such TFTs, high stability and quality performance in humid environments are essential. During TFT operation under ambient moisture, the electrolysis of water molecules occurs via the tip electric field effect. Hydrogen diffuses from the etch-stop layer or back-channel into the main channel under a negative electric field. The hydrogen atoms act as shallow donors (which causes the carrier concentration in the channel to rise), causing the threshold voltage (VTH) to shift in the negative direction. Hydrogen diffusion from the overlap of the source/drain and gate electrodes to the channel center caused by the tip electric field induces a significant barrier lowering and VTH shifts in a short-channel device. However, under negative bias stress (NBS) in ambient moisture, the negative VTH shift is more obvious in short- than in long-channel devices, indicating suppressed hydrogen diffusion in long-channel devices. This is attributed to the electrolysis of water by the tip electric field at the source, drain, and gate electrodes, which causes hydrogen to diffuse to the center of the channel. Here, a novel physical model of the capacitance–voltage (C–V) electrical property changes under ambient moisture is proposed, based on the early appearance of abnormalities in the C–V measurements. The electrolysis of water caused by the tip electric field and electrical abnormalities caused by hydrogen diffusion into the a-IGZO active layer are explained by this model. A secondary-ion mass spectrometry analysis shows that hydrogen content in the channel generally increases under NBS in ambient moisture. The degradation behavior due to moisture in a-IGZO is clarified. Thus, inhibiting the tip electric field may benefit future flexible-display and gas-sensing applications.

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Aim: This study aimed to compare mortality risks across uric acid (UA) levels between non-diabetes adults and participants with diabetes and to investigate the association between hyperuricemia and mortality risks in low-risk adults. Methods: We analyzed data from adults aged >18 years without coronary heart disease and chronic kidney disease (n = 29,226) from the National Health and Nutrition Examination Survey (1999–2010) and the associated mortality data (up to December 2011). We used the Cox proportional hazards models to examine the risk of all-cause and cause-specific (cardiovascular disease (CVD) and cancer) mortality at different UA levels between adults with and without diabetes. Results: Over a median follow-up of 6.6 years, 2069 participants died (495 from CVD and 520 from cancers). In non-diabetes adults at UA ≥ 5 mg/dL, all-cause and CVD mortality risks increased across higher UA levels (p-for-trend = 0.037 and 0.058, respectively). The lowest all-cause mortality risk in participants with diabetes was at the UA level of 5–7 mg/dL. We set the non-diabetes participants with UA levels of <7 mg/dL as a reference group. Without considering the effect of glycemic control, the all-cause mortality risk in non-diabetes participants with UA levels of ≥7 mg/dL was equivalent to risk among diabetes adults with UA levels of <7 mg/dL (hazard ratio = 1.44 vs. 1.57, p = 0.49). A similar result was shown in CVD mortality risk (hazard ratio = 1.80 vs. 2.06, p = 0.56). Conclusion: Hyperuricemia may be an indicator to manage multifaceted cardiovascular risk factors in low-risk adults without diabetes, but further studies and replication are warranted.

We propose a novel pixel circuit using source‐follower structure to be independent of frequency effect of blue‐phase liquid crystal displays (BPLCDs). Simulation results indicated that required gray‐level‐voltages across the BPLC could be achieved accurately when a proper threshold voltage of the driving TFT was chosen. We also successfully fabricated a 12.7‐inch prototype BPLCD using the proposed pixel circuit driven with a field‐sequential‐color method of 240 Hz.