No abstract

Highly sensitive X-ray detection is crucial in, for example, medical imaging and secure inspection. Halide perovskite X-ray detectors are promising candidates for detecting highly energetic radiation. In this report, we describe vacuum-deposited Cs-based perovskite X-ray detectors possessing a p–i–n architecture. Because of the built-in potential of the p–i–n structure, these perovskite X-ray detectors were capable of efficient charge collection and displayed an exceptionally high X-ray sensitivity (1.2 C Gyair –1 cm–3) under self-powered, zero-bias conditions. We ascribe the outstanding X-ray sensitivity of the vacuum-deposited CsPbI2Br devices to their prominent charge carrier mobility. Moreover, these devices functioned with a lowest detection limit of 25.69 nGyair s–1 and possessed excellent stability after exposure to over 3000 times the total dose of a chest X-ray image. For comparison, we also prepared traditional spin-coated CH3NH3-based perovskite devices having a similar device architecture. Their volume sensitivity was only one-fifth of that of the vacuum-deposited CsPbI2Br devices. Thus, all-vacuum deposition appears to be a new strategy for developing perovskite X-ray detectors; with a high practical deposition rate, a balance can be reached between the thickness of the absorbing layer and the fabrication time.

Highly photoluminescent, lead‐free perovskites are of interest for displays and solid‐state light‐emitting devices. In this report, streak camera‐based time‐resolved emission and transient absorption spanning visible to deep‐ultraviolet (UV) wavelengths are utilized to study self‐trapped and free exciton dynamics in vacuum‐deposited cesium copper halide thin films of CsCu2I3 and Cs3Cu2I5. Self‐trapped exciton emission of CsCu2I3 exhibits more noticeable changes with time in the peak position and width than Cs3Cu2I5. UV‐to‐blue emission is detectable for both compositions, where free exciton emission is distinct for CsCu2I3. Transient absorption shows loss of ground‐state bleach signals at early time delays for both, and the bleach signal shifts toward higher energy as time delay increases, likely due to strains induced by the newly created self‐trapped excitons. Global analysis performed on the transient absorption results yields time constants in these materials that build an overall dynamic scheme. This work aids in building a complete picture regarding light emission in these promising materials.

Although vacuum‐deposited metal halide perovskite light‐emitting diodes (PeLEDs) have great promise for use in large‐area high‐color‐gamut displays, the efficiency of vacuum‐sublimed PeLEDs currently lags that of solution‐processed counterparts. In this study, highly efficient vacuum‐deposited PeLEDs are prepared through a process of optimizing the stoichiometric ratio of the sublimed precursors under high vacuum and incorporating ultrathin under‐ and upper‐layers for the perovskite emission layer (EML). In contrast to the situation in most vacuum‐deposited organic light‐emitting devices, the properties of these perovskite EMLs are highly influenced by the presence and nature of the upper‐ and presublimed materials, thereby allowing us to enhance the performance of the resulting devices. By eliminating Pb° formation and passivating defects in the perovskite EMLs, the PeLEDs achieve an outstanding external quantum efficiency (EQE) of 10.9% when applying a very smooth and flat geometry; it reaches an extraordinarily high value of 21.1% when integrating a light out‐coupling structure, breaking through the 10% EQE milestone of vacuum‐deposited PeLEDs.

This paper describes the first use of vacuum‐deposited YF3 films as active materials in memristors. These YF3 memristors function with extraordinary dual digital/analog operation modes. In both modes, the memorization states are all non‐volatile, with long retention times (up to 106 s). In the analog mode, the memristors achieve a stable series of consecutive cycles of 64‐level potentiation and depression, with large ON/OFF resistance ratios (up to 7.2), and extraordinarily balanced linearity. With these YF3 memristors, an excellent recognition accuracy of 97% in the classification of handwritten digits is achieved. Time‐of‐flight secondary ion mass spectroscopy, X‐ray photoelectron spectroscopy, and valance change memory modeling to examine the switching mechanism of YF3 are used, discovering that fluorine vacancy species are responsible for the memristor behavior. Excellent high‐temperature stability during both operation and state preservation suggests that these YF3 memristors might find applicability in neuromorphic computing under relatively harsh conditions.