Undoped and Ga-and Al-doped ZnO films were synthesized using sol-gel and spin coating methods and characterized by X-ray diffraction, high-resolution scanning electron microscopy (SEM), optical spectroscopy and Hall-effect measurements. SEM measurements reveal an average grain size of 20 nm and distinct individual layer structure. Measurable conductivity was not detected in the unprocessed films; however, annealing in hydrogen or zinc environment induced significant conductivity (∼10 −2 Ω.cm) in most films. Positron annihilation spectroscopy measurements provided strong evidence that the significant enhancement in conductivity was due to hydrogen passivation of Zn vacancy related defects or elimination of Zn vacancies by Zn interstitials which suppress their role as deep acceptors. Hydrogen passivation of cation vacancies is shown to play an important role in tuning the electrical conductivity of ZnO, similar to its role in passivation of defects at the Si/SiO2 interface that has been essential for the successful development of complementary metal-oxide-semiconductor (CMOS) devices. By comparison with hydrogen effect on other oxides, we suggest that hydrogen may play a universal role in oxides passivating cation vacancies and modifying their electronic properties. © 2016 Author(s)

Ce doped yttrium aluminum garnet (Ce:YAG) is an important photonic material that is used as a yellow phosphor for white light emitting diodes. In this work, the physical and optical properties of Ce:YAG nanophosphors are investigated and the effects of hightemperature thermal treatments and annealing atmospheres on the particle size and luminescence intensity are discussed. Furthermore, photo-luminescence (PL) was measured as a function of temperature and compared with PL from Ce:YAG single crystals and transparent ceramics to understand the mechanism of luminescence decay with temperature. While the characteristics of PL emission as a function of temperature for single crystals and NPs are similar and follow common decay trends, Ce:YAG transparent ceramics exhibit an interesting unusual increase in PL with temperature. We explained this unique novel behavior by a 4-step mechanism involving localized states in the band gap, and provided evidence from thermoluminescence measurements to support this interpretation. The work reveals a new luminescence phenomenon arising from the overlap of PL and TL emissions; this phenomenon is most likely characteristic of transparent ceramics.

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