Field effect msistors are fabricated on two types of Silicon-On-Diamond (SOD) structures and their radiation response is studied. The results are compared with the radiation response of simultaneously fabricated SIMOX devices. The feasibility of fabricating field effect transistors on SOD structure is demonstrated for the first time and the extreme radiation hardness of such a structure is also verified.

Oxidation of cobalt at room temperature, studied by combined static SIMS, static AES, XPS, and work function investigations Quasisimultaneous SIMS, AES, and XPS investigations of the oxidation of Mo, Ti, and Co in the monolayer range J. Vac. Sci. Technol. 15, 506 (1978); 10.1116/1.569456 Quasisimultaneous SIMS-AES-XPS investigation of the oxidation of Ti in the monolayer range Appl.Although dedication of plasma etching equipment strictly to a single process is becoming a common practice in IC labs, a large number of older plasma systems (especially the barrel type) were designed and are still used for multiple processes such as thin film etching in CF 4 based plasma and photoresist striping in pure oxygen plasma. An investigation of a cross contamination effect is reported here. Silicon wafers coated with aluminum and exposed to a simulated oxygen plasma resist strip process were analyzed using Auger electron spectroscopy and x-ray photoelectron spectroscopy. Relatively large amounts of carbon and fluorine were found to be present on the wafer surfaces. Wafers exposed to wet chemical treatments were analyzed for comparison. The C and F contamination is believed to be due to redeposition of a fluorocarbon compound on the wafer surface originating from the chamber walls, etc. ESCA examination of the samples resulted in similar observations but the chemical identification ofthe contamination could not be made.

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A promising solvent-free technique of electron-beam-assisted vapor-phase codeposition method is presented which allows uniform blending of different conjugated and nonconjugated polymers at the nanoscale. The technique allows direct incorporation of regioregular poly(3-hexylthiophene) (P3HT) polymer with different structural orientations into conventional and semiconducting polymers without fractionation or degradation of P3HT while maintaining the nanoscale morphology of deposited organic films. The results of fabricated novel nanostructured organic composites (∼100–200nm) comprising regioregular and oriented P3HT and different conjugated and nonconjugated polymers including selective assembly of P3HT nanonodules into a copolymer template are presented. We show a typical example of blending of P3HT and polyaniline (PANI) that formed a unique nanoscale morphology comprising interpenetrating networks of different shapes and sizes of nanospherulites (∼100nm) of P3HT in PANI. The so fabricated nanocomposites (∼200nm) exhibited remarkable broadband photoluminescence features covering the entire blue, green, and red wavelength regions between 400 and 1000nm. Such organic nanocomposites might be useful for flexible full-color screen flat panel displays and organic white-light solid-state lighting applications.