Radiation response of silicon on diamond (SOD) devices

Abstract

Field effect msistors are fabricated on two types of Silicon-On-Diamond (SOD) structures and their radiation response is studied. The results are compared with the radiation response of simultaneously fabricated SIMOX devices. The feasibility of fabricating field effect transistors on SOD structure is demonstrated for the first time and the extreme radiation hardness of such a structure is also verified.

Fabrication and thermal evaluation of silicon on diamond wafers

“…Annamali et al were the first to successfully fabricate operating Si-MOSFETs on SOD wafers. 1,8,9 A similar SOD structure with MOSFET devices was reported by Soderbarg et al 2,10,11 Gu et al scaled the SOD fabrication described in Refs. 2 to 4; 12 the same authors also reported the fabrication of integrated circuits on SOD but failed to demonstrate device or circuit logic function.…”

“…7 The work carried out to date on SOD has been largely focused on the fabrication and analysis of operating devices and their radiation hardness. 9,12 There has been very little work completed to actually quantify the advantages that diamond would offer in thermal management. Soderbarg et al calculated a two-dimensional temperature distribution for SOD with respect to SOI and provided a comparison of operating temperatures for Schottky diodes for both cases.…”

Steady-state and transient current transport in undoped polycrystalline diamond films

“…[1][2][3] Such films have great potential for use in various semiconductor applications, especially those related to operation at high temperature or those requiring an effective heat spreading capability. The use of diamond films as buried insulators for silicon-on-insulator ͑SOI͒ materials is an interesting application of diamond as a heat spreader.…”

Effect of an inhomogeneous insulating film on the capacitance of metal–insulator–semiconductor structures

“…Such materials include polycrystalline diamond for use as buried insulator in silicon-on-insulator applications, for instance. 1,2 Naturally, it is of great importance to make a correct electrical characterization of the material. However, when new materials are considered interpretation of measurement data must take new effects into account.…”