Electron field emission from a patterned diamond-like carbon flat thin film using a Ti interfacial layer A 300-nm-thick diamondlike carbon ͑DLC͒ film was deposited on to a heavily doped n-type Si ͑111͒ wafer by filtered arc deposition. A flat thin film cylindrical emitter array was then fabricated by reactive-ion etching the DLC film. Its electron field emission properties were studied using a simple diode structure. A field emission current of 0.1 A was detected under an electric field of 5.2 V/m. As large as 64.1 mA/cm 2 of field emission current density was achieved after an activation process under a 39 V/m field. An image formed on the anode screen showed that electron field emission from the DLC flat emitter array is rather uniform. The field emission behavior is also consistent with Fowler-Nordheim theory. Hydrogen plasma surface treatments were found to enhance the field emission properties.

I–V characteristics of silicon field emission diode and triode were investigated. The maximum emission current of 17 μA and the lowest onset voltage of 60 V were obtained by an array of 245 silicon tips. The typical reverse recovery time of the diode was 350 ps. The typical transconductance of the triode was about 10−7 S. The fabrication processes for forming sharp silicon conical tips with a gate hole diameter 1 μm smaller than the corresponding oxide mask is described. The results of a high temperature activation process for improving emission characteristics of the device are presented. The stability and uniformity of the devices affected by the fabrication process and emission environment are also discussed in this paper.