A stable and repeatable abnormal bipolar resistive switching behavior was observed in a Pt/GaO1.3/Pt sandwich structure without an electroforming process. The low resistance state (LRS) and the high resistance state (HRS) of the device can be distinguished clearly and be switched reversibly under a train of the voltage pulses. The LRS exhibits a conduction of electron tunneling, while the HRS shows a conduction of Schottky-type. The observed phenomena are considered to be related to the migration of oxygen vacancies which changes the space charge region width of the metal/semiconductor interface and results in a different electron transport mechanism.

Deep ultraviolet photoconductive and near-infrared luminescence properties of Er 3+-doped β-Ga 2 O 3 thin films

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