Articles you may be interested inElectric-field-controlled interface strain coupling and non-volatile resistance switching of La1-xBaxMnO3 thin films epitaxially grown on relaxor-based ferroelectric single crystals J. Appl. Phys. 116, 113911 (2014); 10.1063/1.4896172Continuously-tuned tunneling behaviors of ferroelectric tunnel junctions based on BaTiO3/La0.67Sr0.33MnO3 heterostructure AIP Advances 4, 057106 (2014); 10.1063/1.4876234The investigation of reversible strain and polarization effect in (011)-La0.9Ba0.1MnO3 film using field effect configuration Effects of ferroelectric-poling-induced strain on the transport and magnetic properties of La 7 / 8 Ba 1 / 8 MnO 3 thin films La 0.67 Ba 0.33 MnO 3 thin films were epitaxially grown on (111)-oriented 0.31Pb(In 1/2 Nb 1/2 )O 3 -0.35Pb(Mg 1/3 Nb 2/3 )O 3 -0.34PbTiO 3 ferroelectric single-crystal substrates. During ferroelectric poling and polarization rotation, the resistance of La 0.67 Ba 0.33 MnO 3 films tracks the electric-fieldinduced in-plane strain of substrates effectively, implying strain-mediated coupling. Upon poling along the [111] direction, ferromagnetism is suppressed for T < 175 K, but enhanced for T > 175 K, which is explained by magnetoelastic coupling that modifies the film's magnetic anisotropy. Our findings also show that the magnetic field has an opposite effect on the strain-tunability of resistance [i.e.,ðDR=RÞ strain ] above and below the Curie temperature T C , which is interpreted within the framework of phase separation. V C 2013 AIP Publishing LLC. [http://dx.

Tensiled La0.5Sr0.5CoO3 (LSCO) thin films were epitaxially grown on piezoelectric 0.67Pb (Mg1/3Nb2/3)O3-0.33PbTiO3 (PMN-PT) single-crystal substrates. Due to the epitaxial nature of the interface, the lattice strain induced by ferroelectric poling or the converse piezoelectric effect in the PMN-PT substrate is effectively transferred to the LSCO film and thus reduces the tensile strain of the film, giving rise to a decrease in the resistivity of the LSCO film. We discuss these strain effects within the framework of the spin state transition of Co3+ ions and modification of the electronic bandwidth that is relevant to the induced strain. By simultaneously measuring the strain and the resistivity, quantitative relationship between the resistivity and the strain was established for the LSCO film. Both theoretical calculation and experimental results demonstrate that the ferroelectric field effect at room temperature in the LSCO/PMN-PT field-effect transistor is minor and could be neglected. Nevertheless, with decreasing temperature, the ferroelectric field effect competes with the strain effect and plays a more and more important role in influencing the electronic transport properties of the LSCO film, which we interpreted as due to the localization of charge carriers at low temperature.

Articles you may be interested inElectric-field-controlled interface strain coupling and non-volatile resistance switching of La1-xBaxMnO3 thin films epitaxially grown on relaxor-based ferroelectric single crystals Enhanced magnetoelectric effect in La0.67Sr0.33MnO3/PbZr0.52Ti0.48O3 multiferroic nanocomposite films with a SrRuO3 buffer layer Influence of ferroelectric poling induced strain on magnetic and electric properties in tetravalent cation-doped La0.9Hf0.1MnO3 films J. Appl. Phys. 111, 07E105 (2012); 10.1063/1.3670971Effect of PbZr0.52Ti0.48O3 thin layer on structure, electronic and magnetic properties of La0.65Sr0.35 MnO3 and La0.65Ca0.30MnO3 thin-filmsThe authors report the electronic transport and magnetic properties of the La 0.8 Ce 0.2 MnO 3 (LCEMO) thin film epitaxially grown on the ferroelectric 0.67Pb(Mg 1/3 Nb 2/3 )O 3 -0.33PbTiO 3 (PMN-PT) single-crystal substrate and their dependence on the polarization state of the PMN-PT substrate. Upon electric-field-induced polarization switching, the electrical resistance and magnetization of the LCEMO film were modulated reversibly. The underlying coupling mechanism that is responsible for the electric-field-control of the resistance and magnetization strongly depends on temperature, being strain-mediated type at relatively high temperatures but becoming charge-mediated type with decreasing temperature. The knowledge about the evolution of the coupling mechanism with temperature not only helps to understand the drive force for multiferroic properties but also is important for theoretical modeling and device fabrication. V C 2013 AIP Publishing LLC. [http://dx.