No abstract

Optimal deposition process parameters for preparing In2O3 films by reactive evaporation of indium metal are determined by means of experiments. With the optimum conditions determined in this work one can easily prepare In2O3 films of low resistivity of about 3×10-4 Ω· cm and high visible transmission of over 90%, and the deposition rate of 219 Å/min of the films can be obtained. The formation mechanism of the abnormalities of the films caused by departure from the optimal deposition parameters is discussed.