On the Reactive Evaporation of In and In2 O 3 in an  O 2 Environment

Wang, Qiamin; Fang, P. H.

doi:10.1149/1.2086417

Cited by 19 publications

(1 citation statement)

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“…Tipton et al (82) proposed that both nitriding and oxidizing species significantly influence titanium silicide processing, including lateral growth. It has been reported that the oxygen contamination level has to be controlled below 3 ppm in order to form a homogeneous and low resistance silicide layer and to reduce the significant silicide overgrowth (82,83).…”

Section: Suppression Of Lateral Silicide Growth--it Is Known Thatmentioning

confidence: 99%

The Application of Ion Beam Mixing, Doped Silicide, and Rapid Thermal Processing to Self‐Aligned Silicide Technology

Lee

Kwong

1990

J. Electrochem. Soc.

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In this paper we have developed a SALICIDE process for CMOS applications using ion beam mixing for silicide formation and doped silicide in conjunction with RTA drive-in for shallow silicided junction formation, and have investigated the fundamental issues related to this process. Specifically, we have studied (i) the effects of ion beam mixing and RTA on the properties of Ti SALICIDE and the interaction between Ti and SiO2; (ii) the self-aligned TiN~OJTiSi2 formation and phase transformation; (iii) the mechanism of impurity redistribution and segregation, and junction formation during RTA drive-in; and (iv) the performances and reliability of fabricated SALICIDE devices. Results show that this process may have a great impact on future VLSI technology.

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Section: Suppression Of Lateral Silicide Growth--it Is Known Thatmentioning

confidence: 99%

The Application of Ion Beam Mixing, Doped Silicide, and Rapid Thermal Processing to Self‐Aligned Silicide Technology

Lee

Kwong

1990

J. Electrochem. Soc.

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Investigation of the potassium‐ion storage mechanism of nickel selenide materials and rational design of nickel selenide‐C yolk‐shell structure for enhancing electrochemical properties

Kim

Park

Kang

2021

Intl J of Energy Research

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Metal selenide is contemplated as expeditious anode material for potassiumion batteries (KIBs). Here, nickel selenide (NiSe 2 -Ni 0.85 Se) was investigated as an anode material for KIBs. The NiSe x transformed into K 2 Se and K 2 Se 3 (K 2 Se x ) and reversibly returned to NiSe x after the discharge and charge processes (17NiSe 2 + 3Ni 0.85 Se + 38 K + + 38e À $ 19.55Ni + 10K 2 Se + 9K 2 Se 3 ). Furthermore, to enhance the electrochemical properties of nickel selenide, yolk-shell-structured nickel selenide and hollow carbon nanosphere composites, in which nickel selenides intensively existed in the core and were partially formed into nanocrystals in the shell, were produced by simple salt-infiltration and a post-treatment. NiSe x @C exhibited improved cycle and rate properties compared to bare NiSe x because of its structural merits that led to stable cycle performance and high electrochemical kinetics. NiSe x @C exhibited 373 mA h g À1 for the 100th cycle at 0.05 A g À1 and 234 mA h g À1 at 1.0 A g À1 .

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Comparison study of electrochemical and thermal stability of Na ₃ V ₂ ( PO ₄ ) ₃ in different electrolytes under room and elevated temperature

Ping

Kong

et al. 2022

Intl J of Energy Research

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The compatibility and reactivity between electrode materials and electrolytes is important to design safe batteries. As cathode material with guaranteed performance, the knowledge of thermal stability of the reactivity between Na 3 V 2 (PO 4 ) 3 (NVP) and carbonate-based electrolyte are still limited. Therefore, the electrochemical performance of NVP as a positive electrode material for sodium-ion batteries was tested at room temperature using coin cells with six conventional electrolytes. The results show that the charge-discharge performance of cells with different electrolytes can be ranked as cells with NaPF 6 ≈ NaTFSI > NaClO 4 based electrolytes. Moreover, the thermal reactiv-

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On the Reactive Evaporation of In and In2 O 3 in an O 2 Environment

Cited by 19 publications

References 1 publication

The Application of Ion Beam Mixing, Doped Silicide, and Rapid Thermal Processing to Self‐Aligned Silicide Technology

The Application of Ion Beam Mixing, Doped Silicide, and Rapid Thermal Processing to Self‐Aligned Silicide Technology

Investigation of the potassium‐ion storage mechanism of nickel selenide materials and rational design of nickel selenide‐C yolk‐shell structure for enhancing electrochemical properties

Comparison study of electrochemical and thermal stability of Na ₃ V ₂ ( PO ₄ ) ₃ in different electrolytes under room and elevated temperature

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On the Reactive Evaporation of In and In2 O 3 in an O 2 Environment

Cited by 19 publications

References 1 publication

The Application of Ion Beam Mixing, Doped Silicide, and Rapid Thermal Processing to Self‐Aligned Silicide Technology

The Application of Ion Beam Mixing, Doped Silicide, and Rapid Thermal Processing to Self‐Aligned Silicide Technology

Investigation of the potassium‐ion storage mechanism of nickel selenide materials and rational design of nickel selenide‐C yolk‐shell structure for enhancing electrochemical properties

Comparison study of electrochemical and thermal stability of Na 3 V 2 ( PO 4 ) 3 in different electrolytes under room and elevated temperature

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Comparison study of electrochemical and thermal stability of Na ₃ V ₂ ( PO ₄ ) ₃ in different electrolytes under room and elevated temperature