Infrared photodetectors have attracted great interest due to their wide range of applications. (TaSe4)2I nanowires were prepared by the scotch-tape mechanical exfoliation method, and optoelectronic properties are systematically investigated. The (TaSe4)2I photodetector shows superior performance under the leading role of the photo-bolometric effect. Remarkably, the prefabricated photodetector recorded a superior responsivity of 0.792 A W−1 and a high external quantum efficiency of 100.259% under the condition of near-infrared light. These excellent properties suggest that (TaSe4)2I is a highly competitive candidate for high-performance near-infrared photodetectors.

Ferroelectric transistors with semiconductors as the channel material and ferroelectrics as the gate insulator have potential applications in nanoelectronics. We report in-situ modulation of optoelectronic properties of MoSe2 flakes on ferroelectric 0.7PbMg1/3Nb2/3O3-0.3PbTiO3 (PMN-PT). Under the excitation of 638 nm laser, the photoresponsivity can be greatly boosted to 59.8 A/W and the detectivity to 3.2×1010 Jones, with the improvement rate of about 1500% and 450%, respectively. These results suggest hybrid structure photodetector of two-dimensional layered material and ferroelectric has great application prospects in photoelectric detector.prospects in photoelectric detector.