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Ohmic contacts to individual ZnTe nanowires were formed using Ni/Au multilayer electrodes. Measurements based on four terminals were carried out to test the current-voltage characteristics of contacts and nanowires. Specific contact resistivity of Ni/Au contacts is ∼5.2×10−2 Ω cm2 and the intrinsic resistivity of the ZnTe nanowire is ∼369.1 Ω cm. The photoconductivity behavior of individual ZnTe nanowires was observed, which was analyzed with theory of carrier generation, trapping, and recombination.

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