We demonstrated stimulated emission at 288 nm from a silicon-doped AlGaN-based multiple-quantum-well (MQW) ultraviolet (UV) laser grown on sapphire. The optical pumping threshold energy density of the UV laser was 64 mJ/cm2, while lasing behavior was not observed in undoped AlGaN MQWs. This means silicon doping could effectively reduce the lasing threshold of UV lasers, and the mechanism was studied showing that the silicon-doped AlGaN MQWs had a 41% higher internal quantum efficiency (IQE) compared with the undoped one. The transmission electron microscopy characterization showed that silicon doping explicitly improved the crystallographic quality of MQWs. Calculation of the polarization charge in the MQWs further revealed that the advantage of better structure quality outweighed the reduction of internal polarization field by Si doping for the IQE enhancement and successful stimulated emission.

GaN-based vertical light-emitting-diodes (V-LEDs) with an improved current injection pattern were fabricated and a novel current injection pattern of LEDs which consists of electrode-insulator-semiconductor (EIS) structure was proposed. The EIS structure was achieved by an insulator layer (20-nm Ta2O5) deposited between the p-GaN and the ITO layer. This kind of EIS structure works through a defect-assisted tunneling mechanism to realize current injection and obtains a uniform current distribution on the chip surface, thus greatly improving the current spreading ability of LEDs. The appearance of this novel current injection pattern of V-LEDs will subvert the impression of the conventional LEDs structure, including simplifying the chip manufacture technology and reducing the chip cost. Under a current density of 2, 5, 10, and 25 A/cm2, the luminous uniformity was better than conventional structure LEDs. The standard deviation of power density distribution in light distribution was 0.028, which was much smaller than that of conventional structure LEDs and illustrated a huge advantage on the current spreading ability of EIS-LEDs.

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