In this paper we report the structural, electrical and optical properties of epitaxial Ba(Sb x Sn1−x )O3 (x = 0–0.30) (BSSO) films grown on SrTiO3(0 0 1) substrates by the pulsed laser deposition method. The investigation reveals that the transport and optical characteristics of BSSO films depend very sensitively on the Sb-doping content. Temperature-dependent resistivity measurements show that at low Sb contents (x = 0.03, 0.07) the metal–semiconductor transition occurs at 150 K and 80 K, respectively, and the semiconductor behaviour appears in high doped (x = 0.15, 0.30) films. The transmittance decreases significantly from about 80% to nearly zero in the visible region and the optical band gap shifts from 3.48 to 4.0 eV with increasing Sb content in the films. The lowest room-temperature resistivity of 2.43 mΩ cm with carrier density and mobility of 1.65 × 1021 cm−3 and 1.75 cm2 V−1 s−1 was obtained in the films with doping at x = 0.07. By employing them as bottom electrodes we have fabricated transparent Pb(Zr0.52Ti0.48)O3 ferroelectric capacitors showing square polarization–electric field hysteresis loops, indicating that these perovskite-type BSSO films at low doping can be potentially used in transparent devices especially based on all-perovskite heterostructures.

It is important to reduce the recombination of electrons and holes and enhance charge transfer through fine controlled interfaces for advanced catalyst design. In this work, graphene oxide (GO) was composited with graphitic-C3N4 (g-C3N4) and BiOI forming GO/g-C3N4 and GO/BiOI heterostructural interfaces, respectively. GO, which has a work function between the conducting bands of g-C3N4 and BiOI, is used as a buffer material to enhance electron transfer from g-C3N4 to BiOI through the GO/g-C3N4 and GO/BiOI interfaces. The increased photocurrent and reduced photoluminescence indicate efficient reduction of electron and hole recombination under the successful heterostructure design. Accordingly, the introduction of GO as a charge transfer buffer material has largely enhanced the photocatalytic performance of the composite. Thus, introducing charge transfer buffer materials for photocatalytic performance enhancement has proved to be a new strategy for advanced photocatalyst design.

Articles you may be interested inDopant-site-dependent scattering by dislocations in epitaxial films of perovskite semiconductor BaSnO3 APL Mat. 2, 056107 (2014); 10.1063/1.4874895 Infrared-optical spectroscopy of transparent conducting perovskite (La,Ba)SnO3 thin films Appl. Phys. Lett.

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