A bendable and thermally stable solar-blind ultraviolet (UV) photodetector has been demonstrated based on Ni/amorphous Ga2O3 (a-Ga2O3)/a-AlN/Cu foil structure. Here, Cu foil can simultaneously act as a bendable substrate and withstand a high-temperature environment. The ultra-wide bandgap a-AlN insulating layer can withstand mechanical tensile stress and effectively act as an insulating layer between a-Ga2O3 and Cu. Thus, the a-Ga2O3-based photodetector shows stable UV response characteristics with different bending radii and temperatures. The photodetector has high responsivity of 0.518 A W−1 and a fast response time of 0.17 s under 200 °C temperature with a 1.46 cm bending radius. With exceptional bendability and thermal stability, this a-Ga2O3-based photodetector has potential applications in harsh environments such as high-power bendable electron devices, flame detection, etc.

Artificial visual memory systems are attracting significant research attention to emulate the basic functions of the human visual system. However, currently, light detection via visual memory systems mainly focuses on ultraviolet light and single wavelength. Herein, a composite memristor (silicon p‐i‐n photodetector in series with p‐NiO/n‐ZnO heterostructure memristor) is designed and its detection–storage function is realized. The photodetector offers a wide range of detection from 300 to 1000 nm. Similar “learning‐experience” behaviors by light stimulation have been exhibited in the composite memristor. Moreover, different illumination wavelengths (350, 500, 650, and 900 nm) can provide different memory currents (ΔW = 2.4, 4.1, 6.6, and 4.9%, respectively), which benefits the detection–storage of different light information for a wide‐range visual memory simulation similar to the human visual system. This composite memristor opens up new avenue for constituting wider waveband versatile electronic eyes even beyond the visible light region.

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