ZnO ultrafine particle (UFP) films were deposited on glass and SiO2 substrates by a direct current gas discharge activated reactive evaporation method. The effect of substrate temperature and annealing on the structure and morphology of ZnO UFP films was studied by x-ray diffraction and scanning electron microscope. The results show that the spherical island density decreases with increasing annealing temperature and the structure becomes polycrystalline with a (002) preferential orientation as the substrate temperature increases. In addition, angle resolved x-ray photoelectron spectroscopy was used to study the absorption of water on the ZnO UFP film surface by measuring the two deconvoluted peaks for O 1s. The two deconvoluted peaks for O 1s were located at 533.2 and 534.8 eV. The absorption coefficients of water on the surface were 0.52 and 0.43, respectively, for nonannealed and annealed ZnO UFP films.

Tunable diode laser absorption spectroscopy (TDLAS) is extensively utilized in monitoring of trace gases in the environment. With the relative entropy tomographic reconstruction, simultaneous multiplicative algebraic reconstruction technique algorithm and optimization of existing functions and models, TDLAS has been applied to reconstruction of temperature and humidity field, combustion diagnosis, mass flow monitoring and other domains, this paper will analyze the existing TDLAS application and algorithm research.

Pd doped ZnO ultrafine particle (UFP) films were prepared by combining a direct current gas discharge activated reactive evaporation (direct current-gas discharge activated reactive evaporation) and a vacuum flashing evaporation technique. The electronic state structures and depth profiles of the Pd doped ZnO UFP films were investigated using angle resolved x-ray photoelectron spectroscopy. Three surface states of Zn 3d of Pd doped ZnO UFP films are observed, the positions of these states are located at 10.5, 5.5, and 2.7 eV, the binding energies at 10.5 and 5.5 eV result from Zn 3d state and Zn 4s–O 2p mixed state, the binding energy at 2.7 eV is mostly derived from O 2p, Zn 4p–O 2p or Zn 3d–O 2p. In addition, equivalent circuit of the Ag|Pd doped ZnO UFP film |Ag on the basis of morphology observed by scanning electron microscopy is established. Typical complex impedance spectroscopy at various temperatures is also used to study the Pd doped ZnO UFP film.

Growth dynamics and surface fine structure of ZnO ultrafine particle (UFP) films prepared by dc-gas discharge activated reactive evaporation (dc-gas discharge) deposition technique were studied. Spectroscopic study was performed with small angle x-ray scattering (SAXS) and surface extended energy loss fine structure (SEELFS). The SAXS probe of the nature of the film surface should lead to a more complete understanding of the mechanism of film forming and growth dynamics. The highly disordered aggregate film can be described as fractal objects with a mass and surface fractal dimension equal to 2.73 and 2.94, respectively. In addition, the SEELFS spectra of ZnO UFP film was obtained and the data were analyzed by fast Fourier transform. The results indicate that the distance between Zn and O of ZnO UFP film is 1.81 Å. Scanning electron microscope and scanning tunneling microscope were used to study the ZnO UFP film.