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A new class of all organic sol‐gel second‐order nonlinear optical (NLO) materials based on hexa(methoxymethyl) melamine (HMM) was developed. Two NLO active chromophores, 4 (4′‐nitrophenylazo) aniline (DO3) and 4‐amino‐4′‐nitrobiphenyl (ANB), were incorporated into the melamine matrices. The samples exhibited second‐order optical nonlinearity after poling and curing at 220°C for 30 min. DO3/HMM and ANB/HMM samples showed a second harmonic coefficient, d33 of 10.7 and 1.8 pm/V at 1064 nm, respectively. The temporal stability of both systems was studied at room temperature as well as at 100°C. Waveguide optical losses of samples at 633 and 830 nm were found. © 1995 John Wiley & Sons, Inc.

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Articles you may be interested inSynthesis and characterization of an organogermanium resist: Poly(trimethylgermylmethyl methacrylate-co-chloromethylstyrene) J. Vac. Sci. Technol. B 7, 1723 (1989 10.1116/1.584446 Nanometer lithography for III-V semiconductor wires using chloromethylated poly-α-methylstyrene resist Molecular parameters and lithographic performance of poly(glycidyl methacrylate-co-ethyl acrylate): A negative electron resistThe lithographic performance of the resist system poly(p-methylstyrene-co-chloromethylstyrene) PMS-CMS has been assessed. Copolymerization of the monomers, PMS and CMS, produced resists with CMS increasing from 0% to 52%, molecular weights between 122000 and 167000, and dispersivities between 1.7 and 2.3. The sensitivity (D~·S) and contrast of pure PMS for 20 kV electrons was 38 pC cm-2 and 2.8, respectively. Addition of 4.2% CMS increased the sensitivity to 2.1 pC cm -2 but only reduced the contrast to 2.3, a value sufficient for submicron resolution. Further increases in CMS content, to 52%, produced smooth variations in sensitivity and contrastto 1.2 pC cm -2 and 1.5, respectively. Exposure of 4.5% CMS resist with deep UV light (22 mJ cm-2 ) produced 1 pm lines and spaces with vertical profiles. The etch rate of this resist, during poly-Si definition in a chlorine plasma, was almost half that ~f the photoresist HPR206.r