Photoluminescence (PL) intensity on n-type InP at room temperature is found to provide a convenient probe of the density of surface states in the upper part of the gap of InP. PL measurements are used to monitor the interaction phenomena occurring between an insulator (Al2O3, SiOx) and the InP substrate during the first stages of its deposition. Despite the use of a soft deposition technique, the insulator induces systematically interfacial defects in metal-insulator-InP structures. The nature of the insulator and, to a larger extent, the InP surface preparation and the substrate temperature (although kept below 150 °C) play a major role.

There is a substantial research gap regarding analgesic interventions for children and adolescents with chronic pain. Most clinical trials in the field focus on the evaluation of non-pharmacological interventions and are of low methodological quality. There is also a specific lack of trials involving infants and children and adolescents with long-lasting diseases.

The effect of excess phosphorus vapor during the process of MIS structures on InP is analyzed in detail. It is shown that the density of interface state distribution is considerably modified after in situ thermal precleaning of the substrate in phosphorus overpressure (suppression of the Fermi-level pinning and significant reduction of the density of surface states near midgap). Phosphorus overpressure also provides an efficient protection of the surface during the insulator deposition. Fermi-level pinning in the upper part of the gap is assigned to the uncontrolled native oxide left on the surface after a stay of InP substrate in ambient atmosphere.

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