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Laser or elecrricul blow Fuse 3LM -6LM dual damasene copper + MIM cupucirar (ILD= Si02 or FSG) CoSi, gate/diffusion + non-silicided gute/d@usion resistors High-speed + Low Power + 3.3V I/O + Anulog CMOS (low Vt) (high Vt) ( thick gate ox.) Conventional STI None or sroruge cupuchrfor eDRAM or de-coupling cup. non-Epi vs. EpiTABLE I EPI VS. NON EPI FOR DIFFERENT APPLICATIONSA 0.18pm high performance / low power technology platform is described which allows 'system on a chip integration' for a broad spectrum of products. Based on a generic digital process (1) additional modules can be added in a modularand cost effective-manner for mixed signal as well as for eDRAM applications offering a maximum of flexibility for product designers. For mixed signal applications a precision metal-insulator-metal capacitor (MIMCAP) was developed. This is for the first time a realization of a metal-insulatormetal capacitor in a copper dual damascene metallization scheme.

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